Evaluation of thermal rectification at the interface of dissimilar solids by phonon heat transfer

Sun, Xin‐Yuan; Kotake, Shigeo; Suzuki, Yasuyuki; Senoo, Masafumi

doi:10.1002/1523-1496(200103)30:2<164::aid-htj7>3.0.co;2-6

Cited by 7 publications

(4 citation statements)

References 9 publications

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“…To understand the enhancement of fractal structure on the thermal rectification compared with the basic structure, we discussed the influence mechanism in micro–macroscale. In microscale, since LM and LCR transport thermal energy with different carriers, as Figure 3a shows (the Bloch electrons and phonons are presented by straight and wavy lines, respectively), the contact conductance h c‐mi at the interface is given by Equation (4)

\begin{matrix} h_{c - mi} = \frac{h_{e - p} h_{pt/r}}{h_{e - p} + h_{pt/r}} \end{matrix}

where h e–p and h pt/r are the conductance due to electron–phonon scattering and phonon transmission/reflection, respectively

\begin{matrix} \begin{matrix} left \\ h_{e - p} = \sqrt{C k_{normalp} / τ}; \\ K_{ph} = \frac{π}{6} (1 - r_{pr}^{2}) T_{normali} \end{matrix} \end{matrix}

where C is the electron specific heat, k p is the phonon thermal conductivity in the metal, K ph is the heat transfer coefficient of phonons, [ 26 ] r pr is the reflectance of phonons, (1 − r pr 2 ) is the energy transfer coefficient of phonons, T i is the interface temperature.…”

Section: Resultsmentioning

confidence: 99%

“…where C is the electron specific heat, k p is the phonon thermal conductivity in the metal, K ph is the heat transfer coefficient of phonons, [26] r pr is the reflectance of phonons, (1 − r pr 2…”

Section: Effect Of Branches On Interface Temperature and Outflow Temp...mentioning

confidence: 99%

“…Thermal rectification mechanism of solid-state thermal diodes is mainly divided into bulk mechanism [21] and nano-/microscale mechanism, [22][23][24] which depend on the combination of different materials [25] (which owned different thermal conductivities [26,27] and asymmetric electron-phonon interaction in the interface) or construction of asymmetric structures (e.g., anisotropic nanostructured geometry [28] or local-defective regions [29] ), respectively. For experimental ε which is larger than 0.4, the thermal rectification is mostly related to thermal warping, [30] which always requires specific roughness and material characteristics to satisfy the desired relationship.…”

Section: Introductionmentioning

confidence: 99%

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Thermal Diodes Based on Fractal Structures with Tunable Thermal Threshold

Jiang

Zhang

et al. 2021

Adv Funct Materials

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The asymmetry of heat conduction in thermal diodes is attributed to the thermal regulation in thermal logic circuits, thermal control devices, etc. Currently, thermal rectification devices, however, are constrained by either specific on/off switching thresholds, or low sensitivity to manufacturing errors, as well as the restrictions for specific roughness and material characteristics. Here, a thermal diode based on fractal structures (inverted tapered branch channel, 5.7 mm branch length, and 4 branches) with liquid metal/insulator interface is proposed to avoid these existing constraints. The thermal rectification coefficient reaches 0.4704 (16.43 times larger than that of the basic structures) when the filling fraction only increases 1.33 times. The maximum temperature difference for the optimized thermal diodes is 18.31 °C when the heating temperature is 80 °C. By different arrangements of two thermal diodes mounted on chambers' surfaces, the interior temperatures range from 16.06 to 52.34 °C in the same ambient conditions (23.49 °C), indicating the excellent thermal regulation effect of the thermal diodes. These controlled temperature chambers can be applied in greenhouses or cold chain storage devices, more combinations with higher degree of thermal-threshold tunability offer possibilities in solving complicated thermal management problems and promote the energy utilization efficiency.

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\begin{matrix} h_{c - mi} = \frac{h_{e - p} h_{pt/r}}{h_{e - p} + h_{pt/r}} \end{matrix}

where h e–p and h pt/r are the conductance due to electron–phonon scattering and phonon transmission/reflection, respectively

\begin{matrix} \begin{matrix} left \\ h_{e - p} = \sqrt{C k_{normalp} / τ}; \\ K_{ph} = \frac{π}{6} (1 - r_{pr}^{2}) T_{normali} \end{matrix} \end{matrix}

Section: Resultsmentioning

confidence: 99%

Section: Effect Of Branches On Interface Temperature and Outflow Temp...mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Thermal Diodes Based on Fractal Structures with Tunable Thermal Threshold

Jiang

Zhang

et al. 2021

Adv Funct Materials

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show abstract

“…[ 1 ] The basic idea to achieve thermal rectification is that the two materials have a different thermal conductivity dependence with temperature. [ 35–38 ] Under this condition, an inversion of the thermal bias (temperature gradient) direction will result in a different magnitude of the heat flow (forward vs reverse) due to a change in the effective or overall thermal conduction across the two‐segment material structure. [ 1 ]…”

Section: Thermal Diodesmentioning

confidence: 99%

Solid‐State Thermal Control Devices

Swoboda

Klinar

Yalamarthy

et al. 2020

Adv Elect Materials

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Over the past decade, solid‐state thermal control devices have emerged as potential candidates for enhanced thermal management and storage. They distinguish themselves from traditional passive thermal management devices in that their thermal properties have sharp, nonlinear dependencies on direction and operating temperature, and can lead to more efficient circuits and energy conversion systems than what is possible today. They also distinguish themselves from traditional active thermal management devices (e.g., fans) in that they have no moving parts and are compact and reliable. In this article, the recent progress in the four broad categories of solid‐state thermal control devices that are under active research is reviewed: diodes, switches, regulators, and transistors. For each class of device, the operation principle, material choices, as well as metrics to compare and contrast performance are discussed. New architectures that are explored theoretically, but not experimentally demonstrated, are also discussed.

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A review of thermal rectification observations and models in solid materials

Roberts

Walker

2011

International Journal of Thermal Sciences

319

283

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Thermal rectification is a phenomenon in which thermal transport along a specific axis is dependent upon the sign of the temperature gradient or heat current. This phenomenon offers improved thermal management of electronics as size scales continue to decrease and new technologies emerge by having directions of preferred thermal transport. For most applications where thermally rectifying materials could be of use they would need to exhibit one direction with high thermal conductivity to allow for efficient transport of heat from heat generating components to a sink and one direction with low conductivity to insulate the temperature and heat flux sensitive components. In the process of understanding and developing these materials multiple mechanisms have been found which produce thermally rectifying behavior and much work has been and is being done to improve our understanding of the mechanisms and how these mechanisms can be used with our improved ability to fabricate at the nanoscale to produce efficient materials which have high levels of thermal rectification.

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Evaluation of thermal rectification at the interface of dissimilar solids by phonon heat transfer

Cited by 7 publications

References 9 publications

Thermal Diodes Based on Fractal Structures with Tunable Thermal Threshold

Thermal Diodes Based on Fractal Structures with Tunable Thermal Threshold

Solid‐State Thermal Control Devices

A review of thermal rectification observations and models in solid materials

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