Evaluation of the yield impact of epitaxial defects on advanced semiconductor technologies

Williams, Richard L.; Jacques, Robert N.; Akbulut, Mustafa; Chen, Wayne

doi:10.1109/asmc.2000.902550

Cited by 5 publications

(1 citation statement)

References 2 publications

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“…Static charges often attract particles onto the wafer during loading. [5][6][7][8][9] The particulate contamination is obviously a major issue in epi processing; thus, locating their source and eliminating them from the process is critical.…”

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confidence: 99%

Investigation of Epitaxial Process-Induced Stacking Faults on Silicon Wafers by Surface Analytical Methods

Patsch

Ehlert²,

Lankmayr

2008

J. Electrochem. Soc.

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Epitaxial ͑epi͒ stacking faults on silicon wafers were investigated by combining different surface analytical methods. Automatic scanning electron microscope energy-dispersive X-ray spectroscopy analysis provided an overview of the defect situation on the wafer surface ͑coordinates and composition͒ before information on the topography by atomic force microscope and data on the stress fields of epi defects by micro-Raman spectroscopy were collected. Sputtering of the defects was carried out by argon or oxygen ions to find the cause of the defect. Delaminated particles were analyzed by Auger electron spectroscopy and time-of-flight secondary ion mass spectrometry. The results demonstrate that the geometrical type of an epi defect depends on the chemical composition and the physical phase of the contamination.

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confidence: 99%