Abstract:We detail the integration of hydrogenated amorphous silicon (a-Si:H) active pixel sensor (APS) test arrays with an overlying amorphous selenium (a-Se) x-ray photoconductor, and report on results of their x-ray response and imaging properties. The a-Se/a-Si:H APS arrays incorporate a two-transistor (2T) gate-switched pixel amplifier architecture designed to provide high detector array resolution, as well as a controllable on-pixel gain. The direct x-ray detectors consist of in-house fabricated, dual mode active… Show more
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