Evaluation of the true electro-optic effect in some doped KCl crystals

Ramesh, Namakkal G.; Srinivasan, K.

doi:10.1088/0953-8984/2/48/005

Cited by 2 publications

(2 citation statements)

References 29 publications

(26 reference statements)

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“…The growth of single crystals of pure as well as doped KC1 and the determination of the concentrations of impurities have been described by Ramesh [13] and Ramesh and Srinivasan [3,8]. The specimens used were thin square plates, prepared by cleaving as-grown crystals along the (100) plane.…”

Section: Sample Preparationmentioning

confidence: 99%

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Determination of the Quadratic Electrostrictive Coefficients of Some Doped KCl Crystals

Ramesh¹,

Srinivasan

1992

Physica Status Solidi (b)

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The quadratic electrostrictive coefficients of KC1 containing substitutional impurities (KCI : Br-, KClo.8Bro,z, KCI,,,Br, 6 , KCI :T1+, KCl: Cd2+, and KCI : Mn2+) are determined from the stress dependence of static dielectric constants. Small changes in the capacitance of the samples under the application of uniaxial stress are measured with the aid of a bridge circuit and a lock-in amplifier. The values of the components of the electrostriction tensor of the doped systems are found to be enhanced by one to two orders of magnitude compared to those of the pure KCl crystal. The increment of the electrostrictive coefficients of KCI on doping is attributed to (i) the phenomenological description of a point defect as an anisotropic elastic dipole and the orientation of such defects; (ii) an additional deformation of the lattice arising from the reorientation of the I-V dipoles in the case of KCl containing divalent impurities.Aus der Spannungsabhangigkeit der statischen Dielektrizitatskonstanten werden die quadratischen Elektrostriktionskoeffizienten von KCl mit substitutionellen Verunreinigungen (KCI : Br-, KClo,8Bro,2, KC1,,,Bro,6, KCI: Tl', KCI: Cdz+, KC1: Mn2+) bestimmt. Kleine Anderungen in der Probenkapazitat unter einachsiger Spannung werden mit einer Briickenschaltung und lock-in-Verstarker gemessen. Die Komponenten des Elektrostriktionstensors der dotierten Systeme sind um ein bis zwei GroBenordnungen hoher als die von reinen KC1-Kristallen. Die VergroDerung der Elektrostriktionskoeffizienten von KCI durch Dotierung wird 1. der phanomenologischen Beschreibung eines Punktdefekts als anisotropen elastischen Dipol und der Orientierung eines solchen Defekts und 2. einer zusatzlichen Verformung des Gitters durch Umorientierung der I-V-Dipole im Fall von KCI mit zweiwertigen Verunreinigungen zugeschrieben.

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Section: Sample Preparationmentioning

confidence: 99%

“…This means that when measuring the Kerr electro-optic effect one should take into account the changes in the refractive indices due to the deformation of the material caused by electrostriction. A detailed description has been presented by Wemple and DiDomenico, Jr. [l], Kaminow [2], and recently by Ramesh and Srinivasan [3].…”

Section: Introductionmentioning

confidence: 99%