Evaluation of the strain state in SiGe/Si heterostructures by high resolution X-ray diffraction and convergent beam electron diffraction

Atomic‐scale strain analysis for advanced Si/SiGe heterostructure by using transmission electron microscopy

“…The split in the HOLZ line is primarily attributed to lattice distortion at the interface, the presence of defects, and surface relaxation of the diluted specimen. 82,93 The split worsens in regions with higher strain gradient, which makes it infeasible for CBED to measure the strain directly. 94 Strain measurement techniques can be evaluated using two different descriptions: strain precision and strain accuracy.…”

“…It is revealed in Figure 4G–O that sharp HOLZ line patterns can only be observed in the first SiGe layer (near the substrate), while further toward the surface, it transforms into broad HOLZ lines, and after that, even no HOLZ lines are detected at all, which means that it is impossible to extract information from these CBED patterns. The split in the HOLZ line is primarily attributed to lattice distortion at the interface, the presence of defects, and surface relaxation of the diluted specimen 82,93 . The split worsens in regions with higher strain gradient, which makes it infeasible for CBED to measure the strain directly 94 …”