Evaluation of the band alignment and valence plasmonic features of a DIBS grown Ga-doped Mg<sub>0.05</sub>Zn<sub>0.95</sub>O/CIGSe heterojunction by photoelectron spectroscopy

Awasthi, Vishnu; Pandey, Sushil; Kumar, Shailendra; Mukherjee, C.; Gupta, Mukul; Mukherjee, Shaibal

doi:10.1088/0022-3727/48/48/485305

Cited by 25 publications

(22 citation statements)

References 53 publications

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“…It should be noted here that the plasmon energy of free carriers depends upon both carrier concentration and mobility, whereas the plasmon energy of valence electrons is not affected by the carriers' mobility. 36,51 Electrical characterization indicates that the films grown at 200−400 °C have their carrier concentration of the order of 10 21 cm −3 , in concurrence with the high-mobility and low-resistivity values as compared to the samples grown at a higher temperature. Moreover, for higher temperatures, the carrier concentration is decreased toward the order of ∼10 19 cm −3 , whereas the resistivity values are ∼4 times higher when compared to those of the samples grown at 300 °C.…”

Section: ■ Results and Discussionsupporting

confidence: 61%

See 1 more Smart Citation

Investigation of Dual-Ion Beam Sputter-Instigated Plasmon Generation in TCOs: A Case Study of GZO

Garg

Awasthi

Kumar

et al. 2018

ACS Appl. Mater. Interfaces

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The use of the high free-electron concentration in heavily doped semiconductor enables the realization of plasmons. We report a novel approach to generate plasmons in Ga:ZnO (GZO) thin films in the wide spectral range of ∼1.87-10.04 eV. In the grown GZO thin films, dual-ion beam sputtering (DIBS) instigated plasmon is observed because of the formation of different metallic nanoclusters are reported. Moreover, formation of the nanoclusters and generation of plasmons are verified by field emission scanning electron microscope, electron energy loss spectra obtained by ultraviolet photoelectron spectroscopy, and spectroscopic ellipsometry analysis. Moreover, the calculation of valence bulk, valence surface, and particle plasmon resonance energies are performed, and indexing of each plasmon peaks with corresponding plasmon energy peak of the different nanoclusters is carried out. Further, the use of DIBS-instigated plasmon-enhanced GZO can be a novel mean to improve the performance of photovoltaic, photodetector, and sensing devices.

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Section: ■ Results and Discussionsupporting

confidence: 61%

“…Moreover, a detailed description of the UPS measurement system is reported elsewhere. 36,37 The morphology of the GZO 200 and GZO 300 thin films has been evaluated by a field emission scanning electron microscope (FESEM) equipped with a Zeiss Supra 55 lens.…”

Section: ■ Experimental Sectionmentioning

confidence: 99%

Investigation of Dual-Ion Beam Sputter-Instigated Plasmon Generation in TCOs: A Case Study of GZO

Garg

Awasthi

Kumar

et al. 2018

ACS Appl. Mater. Interfaces

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“…This method produces thin films with growth uniformity, reduced surface roughness and adhesion to the substrate even for films grown at room temperature. It is widely used for growth of ZnO and MgZnO films for optoelectronic device applications [20][21][22][23], TiO 2 , Ta 2 O 5 , ZrO 2 и SiO 2 thin films for optical coatings [24,25], VO 2 films for microbolometer uncooled IR sensors [26] and so on. In IBSD the oxide composition can be easily set by adjusting the O 2 partial pressure [27] in contrast to the ALD method wherein a reduction in the oxidant concentration increases carbon impurities in the film.…”

Section: Introductionmentioning

confidence: 99%

The atomic structure and chemical composition of HfOx (x < 2) films prepared by ion-beam sputtering deposition

Алиев¹,

Gerasimova²,

Кручинин³

et al. 2016

Mater. Res. Express

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Non-stoichiometric HfO x films of different chemical composition (x<2) were fabricated by ionbeam sputtering deposition (IBSD) at room temperature. The ratio of O and Hf atoms in films x was varied by setting the O 2 partial pressure in a chamber. An effect of chemical composition on the atomic structure of the films was studied by reflection high-energy electron diffraction, x-ray photoelectron spectroscopy and field emission scanning electron microscopy methods. The films were found to be amorphous, consisting only of three components: Hf-metal clusters, Hf 4 O 7 suboxide and stoichiometric HfO 2. The relative concentration of these components varies with changing x. The surface of the films contains the increased oxygen content compared to the bulk. It was found that the Hf 4 O 7 suboxide concentration is maximal at x=1.8. The concept of hafnium oxide film growth by the IBSD method is proposed to explain the lack of suboxides variety in the films and the instability of HfO 2 , when annealed at high temperature.

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“…The increase in P D beyond the critical level of k is mainly because P S increases with k ( ∝ W G ). 11), the efficiency of MZO power HEMT is low as the conduction losses are higher. However, at higher value of k (> 15), the efficiency is reduced for all power HEMTs as the switching losses play a dominant role.…”

Section: Resultsmentioning

confidence: 99%

“…ZnO-based heterostructures have shown higher two-dimensional electron gas (2DEG) density (∼ 10 13 − 10 14 cm −2 ) [6,8,9] than that exhibited in the GaN-based heterostructures, which is one of the crucial parameters to realize high current densities in power HEMTs. In addition, ZnO, as a material, provides unique advantages of high-quality material production at lower temperatures (100 to 300 ℃) using even a cost-effective polycrystalline growth system along with the accessibility to large-area ZnO substrates at relatively low cost [6,10,11]. Sasa et al [12], Koike et al [13], and Ye et al [14] have realized high-quality epitaxially-grown MgZnO/ZnO (MZO) based HEMT.…”

Section: Introductionmentioning

confidence: 99%

Analytical Study of ZnO-based HEMT for Power Switching

Kumar

Chaudhary

Khan

et al. 2021

Preprint

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We investigate the power switching mechanism to evaluate the power loss ( P D ) and efficiency ( η ) in MgZnO/ZnO (MZO)-based power high electron mobility transistor (HEMT), and physical parameters responsible for P D in molecular beam epitaxy (MBE) and dual ion beam sputtering (DIBS) grown MZO HEMT and compare the performance with the group III-nitride HEMTs. This work extensively probes all physical parameters such as two-dimensional electron gas (2DEG) density, mobility, switching frequency, and device dimension to study their impact on power switching in MZO HEMT. Results suggest that the MBE and DIBS grown MZO HEMT with the gate width ( W G ) of ∼ 205 and ∼ 280 mm at drain current coefficient (k) of 11 and 15, respectively, will achieve 99.96 and 99.95% of η and 9.03 and 12.53 W of P D , respectively. Moreover, W G value for DIBS-grown MZO HEMT is observed to further reduce in the range of 112-168 mm by using a Y 2 O 3 spacer layer leading to the maximum η in the range of 99.98-99.97% and the minimum P D in the range of 5-7 W. This work is significant for the development of cost-effective HEMTs for power switching applications.

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Evaluation of the band alignment and valence plasmonic features of a DIBS grown Ga-doped Mg_0.05Zn_0.95O/CIGSe heterojunction by photoelectron spectroscopy

Cited by 25 publications

References 53 publications

Investigation of Dual-Ion Beam Sputter-Instigated Plasmon Generation in TCOs: A Case Study of GZO

Investigation of Dual-Ion Beam Sputter-Instigated Plasmon Generation in TCOs: A Case Study of GZO

The atomic structure and chemical composition of HfOx (x < 2) films prepared by ion-beam sputtering deposition

Analytical Study of ZnO-based HEMT for Power Switching

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Evaluation of the band alignment and valence plasmonic features of a DIBS grown Ga-doped Mg0.05Zn0.95O/CIGSe heterojunction by photoelectron spectroscopy

Cited by 25 publications

References 53 publications

Investigation of Dual-Ion Beam Sputter-Instigated Plasmon Generation in TCOs: A Case Study of GZO

Investigation of Dual-Ion Beam Sputter-Instigated Plasmon Generation in TCOs: A Case Study of GZO

The atomic structure and chemical composition of HfOx (x < 2) films prepared by ion-beam sputtering deposition

Analytical Study of ZnO-based HEMT for Power Switching

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Evaluation of the band alignment and valence plasmonic features of a DIBS grown Ga-doped Mg_0.05Zn_0.95O/CIGSe heterojunction by photoelectron spectroscopy