1986
DOI: 10.1088/0031-9155/31/5/005
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Evaluation of temperature effects in p-type silicon detectors

Abstract: A theoretical investigation concerning sensitivity variations in semiconductor detectors used in the short-circuit mode at different temperatures and pre-irradiation dose levels has been compared with experimental results. Initially, a sensitivity drop of more than 15% kGy-1 and a sensitivity increase with temperature of less than 1% per 10 degrees C was found for p-type silicon detectors. After a pre-irradiation dose of 5 kGy with 20 MeV electrons these values were changed to about 6.5% kGy-1 and 3% per 10 de… Show more

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Cited by 62 publications
(48 citation statements)
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References 8 publications
(10 reference statements)
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“…The ion chamber was placed at maximum depth in the plastic water phantom and the diodes at surface. Diode sensitivity increases with temperature 10,15 and the use of correction factors to account for this effect is recommended. The temperature correction factor is defined as:…”
Section: Diode Calibrationmentioning
confidence: 99%
“…The ion chamber was placed at maximum depth in the plastic water phantom and the diodes at surface. Diode sensitivity increases with temperature 10,15 and the use of correction factors to account for this effect is recommended. The temperature correction factor is defined as:…”
Section: Diode Calibrationmentioning
confidence: 99%
“…The sensitivity of a diode detector is defined as the charges generated per absorbed dose, and can be expressed as the following, for simplified steady state processes: 13,14,[16][17][18] …”
Section: Introductionmentioning
confidence: 99%
“…The most prevalent of these processes is charge recombination in a silicon diode through recombination-generation, R-G, centers, which capture excess minority carriers and facilitate recombination with a majority carrier. [14][15][16][17][18] The R-G center is not open for further capture of minority carriers until the minority-majority carrier recombination is complete. 19 Generally, the recombination of charge at a R-G center, the reopening of the R-G center, takes place between 0.25 and tens of microseconds.…”
Section: Introductionmentioning
confidence: 99%
“…1 The physical characteristics of commercial diodes for use in IVD have been examined by several authors [2][3][4][5][6][7][8][9][10][11] and it is well established, that with careful use, high precision can be achieved. 1 The physical characteristics of commercial diodes for use in IVD have been examined by several authors [2][3][4][5][6][7][8][9][10][11] and it is well established, that with careful use, high precision can be achieved.…”
Section: Introductionmentioning
confidence: 99%