Evaluation of Stress and Crystal Quality in Si During Shallow Trench Isolation by UV-Raman Spectroscopy

Kosemura, Daisuke; Hattori, Masatomo; Yoshida, Tetsuya; Mizukoshi, T.; Ogura, Atsushi

doi:10.1007/s11664-010-1148-x

Journal of Elec Materi

2010

DOI: 10.1007/s11664-010-1148-x

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Evaluation of Stress and Crystal Quality in Si During Shallow Trench Isolation by UV-Raman Spectroscopy

Daisuke Kosemura

Masatomo Hattori

Tetsuya Yoshida

et al.

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Evaluation of Stress and Crystal Quality in Si During Shallow Trench Isolation by UV-Raman Spectroscopy

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References 25 publications

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