Evaluation of Strain Measurement in a Die-to-Interposer Chip Using In Situ Synchrotron X-Ray Diffraction and Finite-Element Analysis

Hsu, Hsueh Hsien; Chiu, Tz Cheng; Chang, T.-P.; Huang, Shin Yi; Lee, Hsin Yi; Ku, Ching−Shun; Lin, Yang Yi; Su, Chien Hao; Chou, Li Wei; Ouyang, Yao Tsung; Huang, Yi-Chung; Wu, Albert T.

doi:10.1007/s11664-013-2828-0

Cited by 5 publications

(1 citation statement)

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“…Moreover, the latter has lower resolution due to the limited number of line scans that can be captured from the wafer surface and the size of the beam. This becomes more important when the advanced packaging process intends to develop thinner wafers and feature chips with multiple stacked wafers [13]. Thinner wafers and packages pose reliability challenges, and presently there are no compelling non-destructive metrology methods to directly measure the stress and warpage of the wafer under thermomechanical stress conditions [14].…”

Section: Introductionmentioning

confidence: 99%

Metrology of Warpage in Silicon Wafers Using X-ray Diffraction Mapping

Gorji

2024

Preprint

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X-ray Diffraction (XRD) mapping is a non-destructive metrology technique that enables the reconstruction of warpage induced on a Silicon wafer through thermo-mechanical stress. Here, we mapped the wafer's warpage using a methodology based on a series of line scans in the x and y directions and at different 90-degree rotations of the same sample. These line scans collect rocking curves from the wafer's surface, recording the diffraction angle (ω) deviated from the Bragg angle due to surface misorientation. The surface warpage reflects in XRD measurements by inducing a difference between the measured diffraction angle and the reference Bragg angle (ω − ω0) and rocking curve broadening (FWHM). By collecting and integrating the rocking curves (RCs) and FWHM broadening from the whole surface and multiple rotations of the wafer, we could generate 3D maps of the surface function f(x) and the angular misorientation (warpage). The warpage exhibits a convex shape, aligning with optical profilometry measurements reported in the literature. The lab-based XRDI has the potential to be developed to map the wafer's warpage in a shorter time and in situ, as can be perfectly performed in Synchrotron radiation source.

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Section: Introductionmentioning

confidence: 99%