Evaluation of self-heating effect in poly-Si TFT using quasi three-dimensional temperature analysis

Koyanagi, Mitsumasa; Shimatani, Tomohiko; Tsuno, M.; Matsumoto, Takuma; Kato, Noriji; Yamada, So

doi:10.1109/iedm.1993.347390

Cited by 5 publications

(3 citation statements)

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“…At the GB, the carriers have to hop over the barriers. As the temperature rises, the barrier height is lowered, and therefore, the mobility of polysilicon increases [5,11] . Seto's [10] experimental data shows that for doping concentration less than 1 × 10 19 cm −3 , the mobility decreases exponentially with 1/kT.…”

Section: Modeling Of the Self-heating Effectmentioning

confidence: 99%

“…where I D is the drain current, and R th is the thermal resistance of the device. R th is strongly dependent on the substrate materials and the TFT structure [5,11] . It is obvious that the glass substrate is very important for the self-heating [12] .…”

Section: Modeling Of the Self-heating Effectmentioning

confidence: 99%

“…Therefore, like SOI devices, high performance poly-Si TFTs exhibit a negative output conductance in the saturation current when operated at high gates and drain biases [3,4] . However at a low gate bias, the drain current monotonously increases as the temperature is increased [4,5] . Self-heating related reliability has also been investigated elsewhere [6,7] .…”

Section: Introductionmentioning

confidence: 99%

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Modeling of self-heating effects in polycrystalline silicon thin film transistors

Deng

Xue-ren

2009

J. Semicond.

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An analytical DC model accounting for the self-heating effect of polycrystalline silicon thin-film transistors (poly-Si TFTs) is presented. In deriving the model for the self-heating effect, the temperature dependence of the effective mobility is studied in detail. Based on the mobility model and a first order approximation, a closed-form analytical drain current model considering the self-heating effect is derived. Compared with the available experimental data, the proposed model, which includes the self-heating and kink effects, provides an accurate description of the output characteristics over the linear, the saturation, and the kink regimes.

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Section: Modeling Of the Self-heating Effectmentioning

confidence: 99%