Evaluation of scintillation properties of Mg4(Ta,Nb)2O9 single crystals

Hayashi, Taisei; Ichiba, Kensei; Nakauchi, Daisuke; Watanabe, Kenichi; Kato, Takumi; Kawaguchi, Noriaki; Yanagida, Takayuki

doi:10.1016/j.jlumin.2022.119614

Journal of Luminescence

2023

DOI: 10.1016/j.jlumin.2022.119614

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Evaluation of scintillation properties of Mg4(Ta,Nb)2O9 single crystals

Taisei Hayashi

Kensei Ichiba

Daisuke Nakauchi

et al.

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Cited by 13 publications

(1 citation statement)

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“…[6][7][8][9] For such applications, the developments of the scintillators have mainly been conducted with the materials which emit photons in the ranges of ultraviolet (UV)-visible (Vis). 6,[10][11][12][13][14][15][16][17] This reason is that photomultiplier tube (PMT), which has been the common photodetector for scintillation detectors, has the wavelength sensitivity in the ranges of UV-Vis.…”

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Visible–Near Infrared Scintillation Properties of Er-Doped Bi₄Si₃O₁₂ Single Crystals

Ichiba

Okazaki

Takebuchi

et al. 2023

ECS J. Solid State Sci. Technol.

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We synthesized the 0.5, 1.0, 2.0, and 3.0% Er-doped Bi4Si3O12 (BSO) single crystals and researched the photoluminescence (PL) and scintillation properties in visible–near infrared ranges. The X-ray diffraction analysis indicated that the synthesized samples had single-phase structure of BSO. In transmission spectra, all the samples had some absorption peaks owing to the 4f-4f transitions of Er3+ ions. In PL and scintillation properties, all the samples had the emission peaks due to the 6p-6s transition of Bi3+ ions and the 4f-4f transitions of Er3+ ions. Afterglow levels at 20 ms after X-ray irradiation of the 0.5, 1.0, 2.0, and 3.0% Er-doped samples were 348.9, 587.9, 616.6, and 666.6 ppm, respectively. The light yields of the 0.5, 1.0, 2.0, and 3.0% Er-doped samples were 1600, 1200, 900, and 750 ± 10% ph/MeV, respectively. The dose rate response functions of all the samples showed the linear relationship between dose rate and scintillation intensity from 0.006 to 6 Gy/h, and the 2.0% Er-doped sample had the highest intensity among the samples

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confidence: 99%

Visible–Near Infrared Scintillation Properties of Er-Doped Bi₄Si₃O₁₂ Single Crystals

Ichiba

Okazaki

Takebuchi

et al. 2023

ECS J. Solid State Sci. Technol.

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Bulk crystal growth and characterization of intrinsic scintillator CaNb2O6

Zhou,

Yuan,

Nakauchi

et al. 2023

Journal of Crystal Growth

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Improvement of X-ray excited luminescence properties of Mg4Ta2O9 scintillators by rare-earth doping

Ma,

Sun,

Guo

et al. 2024

Journal of Luminescence

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Evaluation of scintillation properties of Mg4(Ta,Nb)2O9 single crystals

Cited by 13 publications

References 36 publications

Visible–Near Infrared Scintillation Properties of Er-Doped Bi₄Si₃O₁₂ Single Crystals

Visible–Near Infrared Scintillation Properties of Er-Doped Bi₄Si₃O₁₂ Single Crystals

Bulk crystal growth and characterization of intrinsic scintillator CaNb2O6

Improvement of X-ray excited luminescence properties of Mg4Ta2O9 scintillators by rare-earth doping

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Evaluation of scintillation properties of Mg4(Ta,Nb)2O9 single crystals

Cited by 13 publications

References 36 publications

Visible–Near Infrared Scintillation Properties of Er-Doped Bi4Si3O12 Single Crystals

Visible–Near Infrared Scintillation Properties of Er-Doped Bi4Si3O12 Single Crystals

Bulk crystal growth and characterization of intrinsic scintillator CaNb2O6

Improvement of X-ray excited luminescence properties of Mg4Ta2O9 scintillators by rare-earth doping

Contact Info

Product

Resources

About

Visible–Near Infrared Scintillation Properties of Er-Doped Bi₄Si₃O₁₂ Single Crystals

Visible–Near Infrared Scintillation Properties of Er-Doped Bi₄Si₃O₁₂ Single Crystals