Evaluation of pH and deposition mechanisms effect on tin sulfide thin films deposited by chemical bath deposition

Higareda-Sánchez, A.; Mis-Fernández, R.; Rimmaudo, I.; Camacho-Espinosa, E.; Peña, J. L.

doi:10.1016/j.spmi.2021.106831

Cited by 10 publications

(5 citation statements)

References 40 publications

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“…Concerning the nucleation stage film growth proceeds by nucleation of crystallites, then forming grains which coalesce to cover the substrate surface and to show a dense structure. These results are consistent with several other studies [49][50][51] . Figure 2 indicated the X-ray diffraction (XRD) patterns for the cobalt selenide thin films produced under different pH values.…”

Section: Resultssupporting

confidence: 94%

Effect of pH on the Synthesis of Cobalt Selenide Films by SILAR Method

Soonmin

2021

Orient. J. Chem

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The successive ionic layer adsorption and reaction method or called SILAR method was used to produce cobalt selenide thin films for the first time. The deposition was carried out onto the substrate under different various pH values. The X-ray diffraction (XRD), field emission scanning electron microscope (FESEM) and ultraviolet visible spectrophotometer were used to investigate the structure, morphology and optical properties of thin films, respectively. The XRD patterns confirmed that the presence of cubic phase cobalt selenide thin films. The grain size increased with increasing the pH value from pH 2 to pH 4 based on the FESEM images. The band gap values are in the range of 2 eV to 2.5 eV.

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Section: Resultssupporting

confidence: 94%

Effect of pH on the Synthesis of Cobalt Selenide Films by SILAR Method

Soonmin

2021

Orient. J. Chem

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“…It can be noted that after the annealing, the XRD pattern remains almost unchanged, indicating that the main phase of SnS was not affected. This result agrees with the reported results in previous studies [24].…”

Section: Structural Studiessupporting

confidence: 94%

“…This work uses a method first reported in 2021 [24] that allows us to grow orthorhombic SnS thin films of 390 nm in 3.5 h. There are reported methods to obtain orthorhombic SnS by CBD with deposition times of 8, 17, 24, 30, and up to 40 h [20,21,[25][26][27] and just a few with times below 6 h [28][29][30]. We study the effect of deposition time and percentage of Sn precursor on structural and optical properties of SnS thin films.…”

Section: Introductionmentioning

confidence: 99%

“…This work is based on a method first reported in 2021 [24], which focuses on studying the PH effect on the chemical deposited SnS films, using a deposition time of 3 h. It is important to note that the reported methods to obtain orthorhombic SnS by CBD use deposition times of 8, 17, 24, 30, and up to 40 h [20,21,[25][26][27] and just a few use times below 6 h [28][29][30]. In the work of Higareda et al [24], they observed a sulfur excess in the chemical solution when the amount of tin precursor was varied in percentages lower than 5%. Thus, to obtain SnS thin films with better crystallinity and stoichiometry, we focused on investigating the effect of the tin precursor increase.…”

Section: Introductionmentioning

confidence: 99%

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Chemical Bath Deposited Orthorhombic SnS Films for Solar Cell Applications

et al. 2022

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Tin sulfide (SnS) thin films were deposited by the chemical bath deposition technique. The used procedure allows us to obtain orthorhombic SnS in 3.5 h and achieve thicknesses of 390 nm. We study the influence of deposition times, percentage of Sn precursor, and post-annealing on the structural and optical properties. The X-ray diffraction measurements of SnS films prepared at a deposition time of 3 h showed orthorhombic structure with characteristic peaks of SnS2. However, increasing the deposition time and the Sn precursor, the orthorhombic SnS phase in these samples becomes predominant. Thin-film morphologies and thicknesses were identified by scanning electron microscopy (SEM). An increase in bandgap from 1.41 eV to 1.56 eV was observed by increasing Sn precursor. The optical properties remain constant after air annealing of 285 °C. Low-temperature photoluminescence spectra show emission bands at 2.5 eV attributed to the presence of SO2. Other deep level transitions were observed at about 0.9 eV, probably due to oxygen.

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“…SnS thin films can be prepared by various methods, including thermal evaporation [6,7], co-evaporation [8][9][10], sputtering [11][12][13][14], sulfurization [15,16], atomic layer deposition [17][18][19], and chemical bath deposition [20]. This indicates that SnS has a high degree of freedom in fabrication methods.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of (Ge0.42Sn0.58)S Thin Films via Co-Evaporation and Their Solar Cell Applications

Motai,

Araki

2024

Materials

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In this study, as a novel approach to thin-film solar cells based on tin sulfide, an environmentally friendly material, we attempted to fabricate (Ge, Sn)S thin films for application in multi-junction solar cells. A (Ge0.42 Sn0.58)S thin film was prepared via co-evaporation. The (Ge0.42 Sn0.58)S thin film formed a (Ge, Sn)S solid solution, as confirmed by X-ray diffraction (XRD) and Raman spectroscopy analyses. The open circuit voltage (Voc), short circuit current density (Jsc), fill factor (FF), and power conversion efficiency (PCE) of (Ge0.42 Sn0.58)S thin-film solar cells were 0.29 V, 6.92 mA/cm2, 0.34, and 0.67%, respectively; moreover, the device showed a band gap of 1.42–1.52 eV. We showed that solar cells can be realized even in a composition range with a relatively higher Ge concentration than the (Ge, Sn)S solar cells reported to date. This result enhances the feasibility of multi-junction SnS-system thin-film solar cells.

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Evaluation of pH and deposition mechanisms effect on tin sulfide thin films deposited by chemical bath deposition

Cited by 10 publications

References 40 publications

Effect of pH on the Synthesis of Cobalt Selenide Films by SILAR Method

Effect of pH on the Synthesis of Cobalt Selenide Films by SILAR Method

Chemical Bath Deposited Orthorhombic SnS Films for Solar Cell Applications

Fabrication of (Ge0.42Sn0.58)S Thin Films via Co-Evaporation and Their Solar Cell Applications

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