2009
DOI: 10.1051/epjap/2009038
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Evaluation of organic sub-monolayers by X-ray based measurements under gracing incident conditions

Abstract: Abstract.The structural investigations of model organic systems like pentacene on silicon oxide in the monolayer regime is very important for the basic understanding of initial nucleation process together with the electronic performance of transistor devices. A method for the evaluation of the island formation and layer closing of the first monolayer is introduced. The method is based on specular X-ray reflectivity and diffuse scattering and reveal integral information on the coverage together with the size an… Show more

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Cited by 9 publications
(10 citation statements)
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“…The wetting layer, with a thickness of 0.6 nm, could be accounted for only if the molecules in this layer are considered to lie flat on the substrate, in contrast to the upright‐standing configuration of the bulk film, though it is not clear if molecules are ordered within this layer. For films of 1 , it was also found that the nucleation density of the wetting layer in submonolayer films (≈1 nm nominal thickness) is very sensitive to the nature of the substrate . Evidence of a wetting layer at the interface with the substrate was also found in films of 6a where the SIP was present but not those where the bulk form was present, while a wetting layer was also observed beneath the monolayer structure of 6b …”
Section: Origins Of Sipsmentioning
confidence: 85%
“…The wetting layer, with a thickness of 0.6 nm, could be accounted for only if the molecules in this layer are considered to lie flat on the substrate, in contrast to the upright‐standing configuration of the bulk film, though it is not clear if molecules are ordered within this layer. For films of 1 , it was also found that the nucleation density of the wetting layer in submonolayer films (≈1 nm nominal thickness) is very sensitive to the nature of the substrate . Evidence of a wetting layer at the interface with the substrate was also found in films of 6a where the SIP was present but not those where the bulk form was present, while a wetting layer was also observed beneath the monolayer structure of 6b …”
Section: Origins Of Sipsmentioning
confidence: 85%
“…26 Finally, for PEN even the formation of an amorphous molecular 'wetting layer' decorating the SiO x substrate below thin-film phase was proposed. 27 The aim of the present work is, first, to challenge the common belief that the film thickness itself is the central parameter for thin-film phase formation, and, second, to identify further parameters influencing its formation. As model compound for our investigations we chose dihexylterthiophene (DH3T), which is composed of a thiophene backbone and hexyl end-substitutions that allow processing the material from solution.…”
Section: Introductionmentioning
confidence: 99%
“…It is known that surfaces are able to induce specific polymorphs upon deposition. 5 , 17 , 18 Even the occurrence of surface mediated phases can be observed with distinct properties from the bulk. 5 …”
mentioning
confidence: 99%