Evaluation of Melt-Grown, ZnO Single Crystals for Use as Alpha-Particle Detectors

Neal, J.S.; Giles, N. C.; Yang, Xiaocheng; Wall, R. Andrew; Üçer, K. B.; Williams, Richard; Wiśniewski, D.; Boatner, L. A.; Rengarajan, Varatharajan; Nause, Jeff; Nemeth, Bill

doi:10.1109/tns.2008.922829

Cited by 45 publications

(29 citation statements)

References 16 publications

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“…Furthermore, recent studies of ZnO nanorods have yielded strong evidence that the visible emissions located at 2.5 and 2.2 eV can be attributed to singly-charged oxygen vacancies (VO+) and doubly-charged oxygen vacancies (VO++) respectively 40 . There has been a steady increase in research focusing on ZnO as a scintillating material over the last decade [41][42][43][44][45][46][47][48][49][50][51] . Some of the properties of ZnO that are appealing for scintillation applications include: high quantum efficiency light output 52 , sub-nanosecond response times 53 , and higher radiation hardness than other semiconductor materials such as Si, GaAs, or GaN 54 .…”

Section: Zno Propertiesmentioning

confidence: 99%

Zinc oxide nanowire gamma ray detector with high spatiotemporal resolution

et al. 2016

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To my mom, Linda.iii ACKNOWLEDGEMENTSThere are no words to express how grateful I am for all the people that have been part of my life during this journey. I could not have completed my PhD without their help, and I would first like to thank the two advisors that guided me through my graduate career.Professor Richard Mu accepted me as an REU student during my final summer as an undergraduate. After interacting with his group and getting a chance to do actual research in a lab, I changed my graduate path from computational physics to experimental physics and never looked back. Professor Mu's group has always felt like an extended family, where the members worked hard and helped each other without question. I also learned humility in his groupcelebrate the victories in the lab, but be mindful of the people and path that led to that point. I honestly can't begin to express how much I appreciate everything he has done to help me and my family over the years. He has been there through all of the ups and downs in my personal and professional life, and I am honored for the chance to continue to work with him in the future.Professor Richard Haglund accepted me into his group at Vanderbilt after I finished my Master's at Fisk University. I struggled at the beginning while trying to balance course work with research and family, and he gave me some of the best advice I've ever received. He told me that my future was in my hands and that I would fail or succeed based on my own actions. That motivated me to work harder than I had ever worked and is something I still carry with me today.I also want to thank Professor Haglund for instilling within me a deeper appreciation for the elegance of physics, from cascade lasers to perturbation theory. His depth of knowledge and work-life balance are inspiring, and I look forward to working with him in future projects. My mom and dad worked extremely hard to provide a solid foundation for me and my brother. I couldn't ask for better parents. My dad worked to provide for our family, and my mom put her career on hold to stay home with me and my brother. They encouraged us to reach for the stars and to always choose the right path, even if it was the more difficult one. I am who I am today due in large part to the sacrifices, encouragement, and love that my parents provided.

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Section: Zno Propertiesmentioning

confidence: 99%

Zinc oxide nanowire gamma ray detector with high spatiotemporal resolution

et al. 2016

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“…Samples denoted as 1 through 6 in Table 1 were doped by the thermochemical treatment of an undoped singlecrystal in a vacuum-sealed quartz ampoule in the presence of the vapor of the dopant metal. The remaining crystals in Table 1 (samples 7 through 10) were doped in the melt during growth under a high oxygen pressure (details of this melt growth system can be found in [14]). The ZnO sample plates were rectangular in shape with approximate dimensions of 10 × 5 × 0.5 mm 3 and were polished to a submicron surface finish.…”

Section: Sample Preparationmentioning

confidence: 99%

Photoelectrochemical Stability and Alteration Products of n-Type Single-Crystal ZnO Photoanodes

Paulauskas

Jellison

Boatner

et al. 2011

International Journal of Electrochemistry

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The photoelectrochemical stability and surface-alteration characteristics of doped and undoped n-type ZnO single-crystal photoanode electrodes were investigated. The single-crystal ZnO photoanode properties were analyzed using current-voltage measurements plus spectral and time-dependent quantum-yield methods. These measurements revealed a distinct anodic peak and an accompanying cathodic surface degradation process at negative potentials. The features of this peak depended on time and the NaOH concentration in the electrolyte, but were independent of the presence of electrode illumination. Current measurements performed at the peak indicate that charging and discharging effects are apparently taking place at the semiconductor/electrolyte interface. This result is consistent with the significant reactive degradation that takes place on the ZnO single crystal photoanode surface and that ultimately leads to the reduction of the ZnO surface to Zn metal. The resulting Zn-metal reaction products create unusual, dendrite-like, surface alteration structural features that were analyzed using x-ray diffraction, energy-dispersive analysis, and scanning electron microscopy. ZnO doping methods were found to be effective in increasing the n-type character of the crystals. Higher doping levels result in smaller depletion widths and lower quantum yields, since the minority carrier diffusion lengths are very short in these materials.

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“…However, film scintillators are suited * This paper was presented at the 12th International Conference to charged particle (e.g., α-ray) detectors since high energy photons or neutrons become noise for charged particle detection and insensitivity of film scintillators against ionizing radiations with high penetration power are ideal. For this purpose, we [13] and some other groups [14][15] examined ZnO film scintillators for α-ray detectors.…”

Section: Introductionmentioning

confidence: 99%

Evaluation of Scintillation Properties of GaN

Yanagida

Fujimoto

Koshimizu

2014

e-J. Surf. Sci. Nanotechnol.

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Optical and scintillation properties of GaN crystalline film were investigated. It showed 30-50% in-line transmittance at wavelength longer than 400 nm and intense emission appeared at 365 nm under 213 nm excitation in photoluminescence (PL) spectrum. When PL decay time was investigated under 280 and 200 nm excitation, luminescence decay time resulted few ns. In X-ray induced radioluminescence spectra, intense emission appeared at 365, 420, and 550 nm. The former one was ascribed to the exciton emission and the latter two would be due to defects related emission. Scintillation decay time of GaN was quite fast as few ns which was consistent with PL results and no slow component was observed.

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Evaluation of Melt-Grown, ZnO Single Crystals for Use as Alpha-Particle Detectors

Cited by 45 publications

References 16 publications

Zinc oxide nanowire gamma ray detector with high spatiotemporal resolution

Zinc oxide nanowire gamma ray detector with high spatiotemporal resolution

Photoelectrochemical Stability and Alteration Products of n-Type Single-Crystal ZnO Photoanodes

Evaluation of Scintillation Properties of GaN

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