Evaluation of In(Ga)As capping in a multilayer coupled InAs quantum dot system: Growth strategy involving the same overgrowth percentage

Gourishetty, Raveesh; Panda, Debiprasad; Dongre, Suryansh; Gazi, Sanowar Alam; Chakrabarti, Subhananda

doi:10.1016/j.jlumin.2021.118340

Cited by 5 publications

(2 citation statements)

References 22 publications

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“…3(a) shows the PL spectra for the samples like single-, bi-, and hepta-layer heterostructures at 20 K and 25 mW laser power. The spectra reveal that all the samples have a peak around ~1185 nm, which attributes the recombination of carriers from ground state of S-K dot family [12]. Such peak intensity is enhanced with the increasing stack of QDs due to higher volume of absorption and such peak is slightly blue shifted for higher QD stack layer.…”

Section: Resultsmentioning

confidence: 90%

Investigation of strain propagation, optical, and structural properties of a novel heterostructure with multilayer Stranski-Krastanov (S-K) strain-coupled quantum dots (QDs)

Saha,

Ahmed Sabiha,

Gourishetty

et al. 2024

Physics and Simulation of Optoelectronic Devices XXXII

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The current work shows a novel multilayer heterostructure with Stranski-Krastanov (S-K) quantum dots (QDs), which shows the relatively superior performance in terms of strain reduction and propagation, and optical emission. Here, 2.7 ML InAs/GaAs(Sb) multilayer S-K QDs heterostructures are grown by employing a solid-source Molecular Beam Epitaxy (MBE) system. The multilayer heterostructures consist of single, bi, and hepta-layer S-K QDs with an adaptation of novel growth strategy by estimation of overgrowth percentage. Such overgrowth percentage optimization and new growth strategy is able to grow uniform dots in reach layer from bottom to top layer and residual strain is reduced with the increasing QD layers. To maintain the similar overgrowth percentage (33%) throughout the heterostructures, monolayer coverage is maintained to be 2.5 ML from just next layer of bottom QDs layer to top for each multilayer heterostructures. The simulation is done by Nextnano software for all the heterostructures to analyse the strain propagation, and bandalignment in depth and all results exhibit that residual strain are almost constant after bi-layer with maximum blue-shift in ground-state emission peak. Low-temperature (19 K) Photoluminescence (PL) measurements are performed to investigate the optical properties of the heterostructures and ground state peaks are found at ~ 1084 nm, which confirms the uniform S-K QDs for all the heterostructures. However, lowest FWHM and highest absorptivity are obtained for hepta-layer heterostructures. Further, HRXRD peaks and corresponding values of strain confirm the enhancement of crystallinity and smooth interfaces with significant amount of reduction in strain for multilayer heterostructures.

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Section: Resultsmentioning

confidence: 90%

Investigation of strain propagation, optical, and structural properties of a novel heterostructure with multilayer Stranski-Krastanov (S-K) strain-coupled quantum dots (QDs)

Saha,

Ahmed Sabiha,

Gourishetty

et al. 2024

Physics and Simulation of Optoelectronic Devices XXXII

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“…It this context it is worthy to mention that GaAs based semiconductor laser and detectors are gained huge improvements over Phosphite based devices due to its low temperature operation [8]. Stranski-Krastanov (S-K) self-assembled growth process is widely acceptable due to the direct transformation of strained layer to island to grow larger QDs and correspondong multilayer strain-coupled Quantum dot infrared photodetectors (QDIPs) [9]. Such QDIPs are performed better as compare to quantum well in terms of sensitivity of normal incident light, carrier lifetime, higher order carrier confinment and quantum efficiency [10].…”

Section: Introductionmentioning

confidence: 99%

Analysis of optical properties and reduced stain estimation in InAs/InGaAsSb quantum dot heterostructure with the variation of growth rate

Saha,

Sabiha,

Gourishetty

et al. 2023

Infrared Sensors, Devices, and Applications XIII

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Conventional InAs/GaAs QD heterostructures are drawing the significant amount of interest among the worldwide researchers due to the excellent carrier confinement, high optical absorption, lower binding energy and high electron mobility. Also, impact of Sb incorporation in the capping layers provides the far-infrared wavelength emission window (1.3 µm to 1.56 µm). In current work, the effects of strain and composition on the optical properties of vertically uncoupled InAs/InGaAs quantum dots (QDs) capped with a thin layer combining Sb quaternary alloys are investigated experimentally. In this work, growth rate of the QDs formation is varied such as 0.05 ML/s, 0.07 ML/s and 0.1 ML/s for selective 28% Sb composition. The atomic force microscopic (AFM) measurement is performed on the grown quaternary capped QDs heterostructures and better dot uniformity and density is observed for selective growth rate sample. The out-plane X-ray diffraction (XRD) is measured for all the growth rate varying heterostructures. The strains are estimated from the corresponding XRD plots and such results confirm the defect free growth of heterostructures with reduced strain and high dot size for 0.05 ML/s growth rate sample. The photoluminescence (PL) is conducted to characterize the optical properties of the grown QDs heterostructures. The 20 K PL peak is gradually shifted from 1214 nm to1249 nm with the decreasing growth rate from 0.1 ML/s to 0.05 ML/s. Therefore, growth rate is optimized for InAs/InGaAsSb QD heterostructures, which will be exhibited the higher photo absorption and carrier lifetime and such heterostructures can be a promising candidate for III-V QD based opto-electronic devices.

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Efficiency enhancement of solar cells using multi-layer interdiffused InGaAs/ GaAs quantum dots: A numerical approach

Rai

Askari

Das

et al. 2022

Micro and Nanostructures

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Evaluation of In(Ga)As capping in a multilayer coupled InAs quantum dot system: Growth strategy involving the same overgrowth percentage

Cited by 5 publications

References 22 publications

Investigation of strain propagation, optical, and structural properties of a novel heterostructure with multilayer Stranski-Krastanov (S-K) strain-coupled quantum dots (QDs)

Investigation of strain propagation, optical, and structural properties of a novel heterostructure with multilayer Stranski-Krastanov (S-K) strain-coupled quantum dots (QDs)

Analysis of optical properties and reduced stain estimation in InAs/InGaAsSb quantum dot heterostructure with the variation of growth rate

Efficiency enhancement of solar cells using multi-layer interdiffused InGaAs/ GaAs quantum dots: A numerical approach

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