Evaluation of implantation annealing for highly-doped selective boron emitters suitable for screen-printed contacts

Müller, Ralph; Benick, Jan; Bateman, N.; Schön, Jonas; Reichel, Christian; Richter, Armin; Hermle, Martin; Glunz, Stefan W.

doi:10.1016/j.solmat.2013.06.040

Cited by 42 publications

(43 citation statements)

References 12 publications

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“…Consequently, an anneal temperature of at least 950 C is necessary to activate all boron atoms, which is consistent with the results reported by M€ uller et al at the same implantation dose. 27 Figure 1 (b) shows that, as expected in diffused emitters, sheet resistance decreases down to 20 X/sq in bSi when the temperature is increased to 975 C. In addition, Fig. 1 highlights an interesting difference between implanted and diffused emitters.…”

Section: Experimental Results On Diffused and Implanted Emittersmentioning

confidence: 61%

“…After bSi etching, the wafers were separated into two groups for diffusion and implantation. Boron implantation was performed at an energy of 10 keV, typically used in the photovoltaics industry to limit damage formation, 26 and with a dose of 3 Â 10 15 cm À2 , which ensures that implantation damage can be cured in a range of anneal temperatures from 950 C to 1050 C. 27 The ion beam tilt was kept to the standard value of 7 28 as a tradeoff between damage formation and beam screening by the bSi needles. 29 After implantation, a 20 min anneal was performed in the nitrogen ambient at temperatures ranging from 850 C to 1050 C (Table I), followed by oxidation for 20 min at the same temperature and by a 5 min anneal in nitrogen to anneal the silicon oxide.…”

Section: Methodsmentioning

confidence: 99%

“…In fact, M€ uller et al showed that a 10 min anneal at a temperature of 1050 C was needed to fully suppress Shockley-Read-Hall (SRH) recombination due to inactive boron and lattice defects. 27,45 However, the relative impact of each recombination mechanism (Auger recombination, surface recombination, and emitter SRH recombination) on J 0e cannot be obtained from the results displayed in Fig. 4.…”

Section: B Surface Passivationmentioning

confidence: 99%

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Recombination processes in passivated boron-implanted black silicon emitters

Gastrow

Ortega

Alcubilla

et al. 2017

Journal of Applied Physics

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Recombination processes in passivated boron-implanted black silicon emitters In this paper, we study the recombination mechanisms in ion-implanted black silicon (bSi) emitters and discuss their advantages over diffused emitters. In the case of diffusion, the large bSi surface area increases emitter doping and consequently Auger recombination compared to a planar surface. The total doping dose is on the contrary independent of the surface area in implanted emitters, and as a result, we show that ion implantation allows control of emitter doping without compromise in the surface aspect ratio. The possibility to control surface doping via implantation anneal becomes highly advantageous in bSi emitters, where surface passivation becomes critical due to the increased surface area. We extract fundamental surface recombination velocities S n through numerical simulations and obtain the lowest values at the highest anneal temperatures. With these conditions, an excellent emitter saturation current (J 0e ) is obtained in implanted bSi emitters, reaching 20 fA/cm 2 6 5 fA/cm 2 at a sheet resistance of 170 X/sq. Finally, we identify the different regimes of recombination in planar and bSi emitters as a function of implantation anneal temperature. Based on experimental data and numerical simulations, we show that surface recombination can be reduced to a negligible contribution in implanted bSi emitters, which explains the low J 0e obtained. Published by AIP Publishing. [http://dx

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Section: Experimental Results On Diffused and Implanted Emittersmentioning

confidence: 61%

Section: Methodsmentioning

confidence: 99%

Section: B Surface Passivationmentioning

confidence: 99%

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Recombination processes in passivated boron-implanted black silicon emitters

Gastrow

Ortega

Alcubilla

et al. 2017

Journal of Applied Physics

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“…Table 1 shows the values of input parameters, which were taken for the simulation of IBC solar cells. The input parameters like widths of emitter and BSF [5,13,33,34], saturation current densities [16,35,36], and sheet resistances [13,16,24,37] were selected according to the fabricated designs published in research articles. The width of contacts were varied from 8 μm to 80 μm to get different combinations of the ratio for contact openings.…”

Section: Simulation Detailsmentioning

confidence: 99%

Simulation Results: Optimization of Contact Ratio for Interdigitated Back-Contact Solar Cells

Budhraja

Devayajanam

Basnyat

2017

International Journal of Photoenergy

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In the fabrication of interdigitated back contact (IBC) solar cells, it is very important to choose the right size of contact to achieve the maximum efficiency. Line contacts and point contacts are the two possibilities, which are being chosen for IBC structure. It is expected that the point contacts would give better results because of the reduced recombination rate. In this work, we are simulating the effect of contact size on the performance of IBC solar cells. Simulations were done in three dimension using Quokka, which numerically solves the charge carrier transport. Our simulation results show that around 10% of contact ratio is able to achieve optimum cell efficiency.

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“…1a). In order to obtain higher open circuit voltage (V OC ) and lower saturation current densities (J 0 ) "lightly doped homojunctions" 1,2 approaches are being considered. However to overcome recombination issues due to the direct contact between the doped c-Si and the metal grid, and to counterbalance the higher sheet resistance (R Sheet ) of lowly doped emitters, TCO layers may be used (see Fig.…”

Section: Introductionmentioning

confidence: 99%