Evaluation of high-resolution and sensitivity of n-CAR hybrid resist for  sub-16nm or below technology node

Sharma, Satinder K.; Moinuddin, Mohamad G.; Reddy, Pulikanti Guruprasad; Pradeep, Chullikkattil P.; Ghosh, Subrata; Gonsalves, Kenneth E.

doi:10.1117/12.2297565

Cited by 2 publications

(9 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In 1 H NMR spectra of copolymers, the resonance peaks of the olefinic protons of the monomers MAPDST and ADSM appearing at δ 5.97, 6.32 ppm and at δ 5.57, 6.20 ppm, respectively, disappeared . It indicates the transformation of monomers into hybrid copolymers.…”

Section: Resultsmentioning

confidence: 98%

“…Azobisisobutryronitrile (AIBN) was purchased from Paras Polymers, India and recrystallized twice from methanol before use. MAPDST and ADSM monomers were prepared according to reported procedures. , …”

Section: Methodsmentioning

confidence: 99%

“…MAPDST and ADSM monomers were prepared according to reported procedures. 19,20 2.2. Procedure for the Synthesis of n-CAR Hybrid Copolymers.…”

Section: Methodsmentioning

confidence: 99%

“…Moreover, Telecky et al demonstrated hafnium-based metal oxide resist HafSOx for 18 nm line-space (half-pitch) features exposed at 240 μC/cm 2 with LWR of 1.6 nm . Our group recently explored (4-(methacryloyloxy)phenyl)-dimethylsulfoniumtriflate (MAPDST)-based copolymers as radiation/photosensitive resists for sub-15 nm patterning and found them to be suitable at e-beam doses of 1200 μC/cm 2 . ,− In a recent report, Enomoto et al demonstrated the sensitivity enhancement by introducing the organotin compound in a n-CAR resist prepared typically through a conventional esterification reaction . Notably, electrons of as low as ∼1.2 eV can induce chemical reactions in the Sn-based resist formulation.…”

Section: Introductionmentioning

confidence: 99%

“…The synthesized resist showed CD patterning down to 12 nm. Focusing on the heavy metals, particularly tin (Sn), has been of great interest mainly because of its interesting nature such as high optical density (σ EUV ) 10–12 and also the hemolysis of C–Sn bond sensitivity is highly significant during the irradiation. ,, We investigated the effect of various weight percentages of organo-tin (Sn) species in polymer network on HR-EBL patterning. Also, for detailed analysis, a systematic investigation on the effect of patterning and processing parameters on HR pattern generation has been performed.…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Organotin in Nonchemically Amplified Polymeric Hybrid Resist Imparts Better Resolution with Sensitivity for Next-Generation Lithography

Peter

Moinuddin

Ghosh

et al. 2020

ACS Appl. Polym. Mater.

Self Cite

View full text Add to dashboard Cite

Given the need for a next-generation technology node in the area of integrated circuits (ICs), improvement in the properties of resist materials, particularly sensitivity (E D ), resolution, good etch resistance, and low line edge/width roughness (LER/LWR), has been highly desirable but also extremely challenging. Herein, we report a series of organic− inorganic hybrid nonchemically amplified copolymer resists (n-CARs) bearing radiation-sensitive sulfonium functionality as well as tin metal as an organometallic unit in the structural backbone for low E D and LER/LWR. These resists have been synthesized by the free radical copolymerization of the organic monomer (4-(methacryloyloxy)phenyl)-dimethylsulfoniumtriflate (MAPDST) and acetyldibutylstannyl methacrylate (ADSM) in different feed ratios (97:3, 93:7, 88:12) and characterized using FT-IR, 1 H, 19 F NMR, GPC, XPS, and ICP-OES techniques. These MAPDST-co-ADSM copolymers exhibited molecular weights (M w ) in the range of 10 077−12 187 g mol −1 . Electron beam lithography (EBL) studies revealed that the negative tone n-CARs characteristic with patterning down to sub-15 nm features. The well-developed sub-15 nm nanofeatures showed low LER of ∼1.29 ± 0.07 line patterns (number belongs to feed ratio 93:7). The variable e-beam exposure dose study revealed that the E D of these resists varies with the percentage of incorporated Sn in the polymer matrix. Incorporation of 2.48 wt % Sn (feed ratio 88:12) in the polymer chain led to a significant enhancement in the E D (175 μC/cm 2 ). Furthermore, the mechanistic study of pattern development has been performed with electron beam reactivity analyses using the XPS technique. These investigations substantiate the potential candidature of developed resist formulation for next-generation semiconductor technology applications.

show abstract

Section: Resultsmentioning

confidence: 98%

Section: Methodsmentioning

confidence: 99%

“…MAPDST and ADSM monomers were prepared according to reported procedures. 19,20 2.2. Procedure for the Synthesis of n-CAR Hybrid Copolymers.…”

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Organotin in Nonchemically Amplified Polymeric Hybrid Resist Imparts Better Resolution with Sensitivity for Next-Generation Lithography

Peter

Moinuddin

Ghosh

et al. 2020

ACS Appl. Polym. Mater.

Self Cite

View full text Add to dashboard Cite

show abstract

Development of Nickel-Based Negative Tone Metal Oxide Cluster Resists for Sub-10 nm Electron Beam and Helium Ion Beam Lithography

Kumar

Chauhan

Moinuddin

et al. 2020

ACS Appl. Mater. Interfaces

Self Cite

View full text Add to dashboard Cite

Hybrid metal−organic cluster resist materials, also termed as organo-inorganics, demonstrate their potential for use in next-generation lithography owing to their ability for patterning down to ∼10 nm or below. High-resolution resist patterning is integrally associated with the compatibility of the resist and irradiation of the exposure source. Helium ion beam lithography (HIBL) is an emerging approach for the realization of sub-10 nm patterns at considerably lower line edge/width roughness (LER/ LWR) and higher sensitivity as compared to electron beam lithography (EBL). Here, for the first time, a negative tone resist incorporating nickel (Ni)-based metal−organic clusters (Ni-MOCs) was synthesized and patterned using HIBL and EBL at 30 keV. This resist comprises a nickel-based metal building unit covalently linked with the organic ligand: m-toluic acid (C 8 H 8 O 2 ). Dynamic light scattering confirmed a narrow size distribution of ∼2 nm for metal−organic cluster (MOC) formulations. High-resolution ∼9 nm HIBL line patterns were well developed at a sensitivity of 22 μC/cm 2 and at a significantly low LER and LWR of 1.81 ± 0.06 and 2.90 ± 0.06 nm, respectively. Analogous highresolution patterns were also observed in EBL with a sensitivity of 473 μC/cm 2 . Hence, the Ni-MOC-based resist investigated using HIBL and EBL elucidates the ability of its potential for the sub-10 nm technology node, under standard processing conditions.

show abstract

Evaluation of high-resolution and sensitivity of n-CAR hybrid resist for sub-16nm or below technology node

Cited by 2 publications

References 18 publications

Organotin in Nonchemically Amplified Polymeric Hybrid Resist Imparts Better Resolution with Sensitivity for Next-Generation Lithography

Organotin in Nonchemically Amplified Polymeric Hybrid Resist Imparts Better Resolution with Sensitivity for Next-Generation Lithography

Development of Nickel-Based Negative Tone Metal Oxide Cluster Resists for Sub-10 nm Electron Beam and Helium Ion Beam Lithography

Contact Info

Product

Resources

About