Evaluation of high-performance, self-powered and wavelength-selective InGaN/GaN multiple quantum well UV photodetectors fabricated on sapphire substrate: Analysis of the influence of growth temperature

Dalapati, Pradip; Yamamoto, Kosuke; Egawa, Takashi; Miyoshi, Makoto

doi:10.1016/j.sna.2021.113050

Cited by 12 publications

(7 citation statements)

References 76 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The passivation film was deposited by an atomic layer deposition unit (Cambridge Nano-tech) [18]. During the atomic layer deposition, trimethylaluminum was used as an Al precursor, whereas purified H2O and O3 were considered as the O2 precursors [11,18]. However, the details of the various optical and electrical measurements (electroluminescence (EL), current-voltage (I-V) at different conditions (without and with light, low-temperature), dark capacitance-voltage (C-V), DLTS, and photocurrent spectroscopy (PCS)) are described in our earlier articles [11,15,17,19].…”

Section: Device Fabrication and Characterizationmentioning

confidence: 99%

“…For the development of high-performance UV light detection devices with ultrafast response speed, InGaN/GaN multiple quantum well (MQW) structures have commonly been employed in Refs. [9][10][11][12]. The InGaN/GaN MQW structure can effectively decrease the thermodynamic and strain-induced structural instabilities as well as the formation of V-type defects, leading to surpassing the technical bottleneck in the usable high spectral responsivity [11,13].…”

Section: Introductionmentioning

confidence: 99%

“…[9][10][11][12]. The InGaN/GaN MQW structure can effectively decrease the thermodynamic and strain-induced structural instabilities as well as the formation of V-type defects, leading to surpassing the technical bottleneck in the usable high spectral responsivity [11,13].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Current-induced degradation behaviors of InGaN/GaN multiple quantum well UV photodetectors: Role of electrically active defects

Dalapati¹,

Almalki²,

Alhassan³

et al. 2022

Sensors and Actuators A: Physical

Self Cite

View full text Add to dashboard Cite

Section: Device Fabrication and Characterizationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Current-induced degradation behaviors of InGaN/GaN multiple quantum well UV photodetectors: Role of electrically active defects

Dalapati¹,

Almalki²,

Alhassan³

et al. 2022

Sensors and Actuators A: Physical

Self Cite

View full text Add to dashboard Cite

“…16 Ultraviolet photodetectors (UVPD) have been used in a wide range of applications. 17 GaN-based μLED and photodetector devices cover the entire wavelength range from UV to visible light, which plays an important role in the transmitter and receiver sides of optical wireless communication systems. Monolithic heterogeneous integrated devices are attracting considerable interest.…”

Section: Introductionmentioning

confidence: 99%

Design and Photomodulation Performance of a UV-Driven Full GaN Integrated μLED and BJT Phototransistor

Su,

Wang,

Zou

et al. 2024

ACS Photonics

View full text Add to dashboard Cite

A vertical integration of indium gallium nitride/ gallium nitride (InGaN/GaN)-based microlight-emitting diode (μLED) and GaN ultraviolet bipolar junction transistor (BJT) phototransistor (UVPT), based on the same GaN material and process platform (UVPT-μLED), was proposed. The integrated device is a novel integrated device with light-emitting, detecting, sensing, driving and regulating functions. It can be used as a receiver and transmitter. The light-emission effect of the μLED on UVPT can be regulated by changing the power of an external light. Optical-electrical-optical conversion was conducted with Silvaco TCAD software. Electro-optic modulation characteristics and optical power amplification were attained through a Silvaco TCAD simulation. By optimization of the size and concentration of the device epitaxial, the current gain of the optimized device reaches a maximum of 240. The UVPT-μLED device shows a strong response to small-power light and a stable response to high-power light. The UVPT-μLED chip with a high switching ratio was successfully prepared and used to verify the feasibility of the UVPT-μLED device. The proposed monolithic integrated device not only can be used for traditional displays but also shows great potential in intelligent displays, such as human−computer interactive systems, on-chip optical interconnects, photonic chips and visible-light communications.

show abstract

“…(e) Detectivity of three types of InGaN based PD. (f) Comparison of R and D* of the InGaN NR/PEDOT:PSS@Ag NW heterojunction PD with previously reported InGaN visible light PD 13,[49][50][51][52][53][54]8,[55][56][57][58][59][60][61]44.…”

mentioning

confidence: 99%

High-Speed and High-Responsivity Blue Light Photodetector with an InGaN NR/PEDOT:PSS Heterojunction Decorated with Ag NWs

Chen,

Xie,

Lan

et al. 2024

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

InGaN nanorods possessing larger and wavelength selective absorption by regulating In component based visible light photodetectors (PDs) as one of the key components in the field of visible light communication have received widespread attention. Currently, the weak photoelectric conversion efficiency and slow photoresponse speed of InGaN nanorod (NR) based PDs due to high surface states of InGaN NRs impede the actualization of high-responsivity and high-speed blue light PDs. Here, we have demonstrated high-performance InGaN NR/PEDOT:PSS@Ag nanowire (NW) heterojunction blue light photodetectors utilizing surface passivation and a localized surface plasmon resonance effect. The dark current is significantly reduced by passivating the InGaN NR surface states using PEDOT:PSS. The photoelectric conversion efficiency is significantly increased by increasing light absorption due to the electromagnetic field oscillation of Ag NWs. The responsivity, external quantum efficiency, detectivity, and fall/off time of the InGaN NR/PEDOT:PSS@Ag NW PDs are up to 2.9 A/W, 856%, 6.64 × 1010 Jones, and 439/725 μs, respectively, under 1 V bias and 420 nm illumination. The proposed device design presents a novel approach toward the development of low-cost, high-responsivity, high-speed blue light photodetectors for applications involving visible light communication.

show abstract

Evaluation of high-performance, self-powered and wavelength-selective InGaN/GaN multiple quantum well UV photodetectors fabricated on sapphire substrate: Analysis of the influence of growth temperature

Cited by 12 publications

References 76 publications

Current-induced degradation behaviors of InGaN/GaN multiple quantum well UV photodetectors: Role of electrically active defects

Current-induced degradation behaviors of InGaN/GaN multiple quantum well UV photodetectors: Role of electrically active defects

Design and Photomodulation Performance of a UV-Driven Full GaN Integrated μLED and BJT Phototransistor

High-Speed and High-Responsivity Blue Light Photodetector with an InGaN NR/PEDOT:PSS Heterojunction Decorated with Ag NWs

Contact Info

Product

Resources

About