1993
DOI: 10.1109/23.256672
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Evaluation of HgI/sub 2/ detectors for lead detection in paint

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Cited by 10 publications
(2 citation statements)
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“…The ionization energy required for silicon is ~3.6 eV and for germanium is ~2.9 eV, which is one order magnitude smaller than that of gas-filled and scintillators detectors. Variety of semiconductor materials like Si, Ge, HgI2 [26], CdTe [27], CdZnTe [28] and GaAs [29] were considered for nuclear spectroscopy applications and among these detector materials, silicon and germanium are widely used in practice. The compound semiconductor detectors CdTe, CdZnTe are also increasingly used in spectrometry applications in the high energy X-ray region.…”
Section: Semiconductor Detectorsmentioning
confidence: 99%
“…The ionization energy required for silicon is ~3.6 eV and for germanium is ~2.9 eV, which is one order magnitude smaller than that of gas-filled and scintillators detectors. Variety of semiconductor materials like Si, Ge, HgI2 [26], CdTe [27], CdZnTe [28] and GaAs [29] were considered for nuclear spectroscopy applications and among these detector materials, silicon and germanium are widely used in practice. The compound semiconductor detectors CdTe, CdZnTe are also increasingly used in spectrometry applications in the high energy X-ray region.…”
Section: Semiconductor Detectorsmentioning
confidence: 99%
“…In the last five years there was an impressive improvement in the field of thermoelecthcally cooled small X-ray detectors, and new X-ray detectors become available (Si-PIN by AMPTEK [1] and Hg12 by XSIRJIJS [2]) or old detectors with better performances (CZT by AMPTEK and Si-strip by Fiorini, et a!. [3}).…”
Section: Introductionmentioning
confidence: 99%