Abstract:A kinetic model based on thermodynamical concepts has been investigated to determine the grain size and its surface area in heavily arsenic-doped polysilicon for various arsenic concentrations, annealing times and annealing temperatures. Computer simulation technique has been used to determine the grain boundary self-diffusion of silicon atoms. The numerical analysis of our results shows that the grain surface area increases with annealing time and annealing temperature, but decreases with arsenic concentratio… Show more
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