Evaluation of fixed abrasive diamond wire sawing induced subsurface damage of solar silicon wafers

Xiao, Huifang; Wang, Hairong; Yu, Na; Liang, Rongguang; Tong, Zhe; Chen, Zhi; Wang, Jiuhong

doi:10.1016/j.jmatprotec.2019.116267

Cited by 54 publications

(19 citation statements)

References 41 publications

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“…Wire-saw slicing R a 0.14-4.23 [6][7][8][9][10][11] 28.7-94.4 [10,11] Collapse pits [6][7][8][9]11] Fragmentation [7,8] Chipping-off [8] Scratching groove [6][7][8][9][10][11] [ [6][7][8][9][10][11] Diamond grinding R a 0.07-3.35 [12,13] N/A Grinding mark [12,14] Pitting [12,14] Crack [12,14,15] Chipping-off [16] [ [12][13][14][15][16] WEDM R a 2.31-6.3 [17][18][19][20] 0.8-22.3 [17,18,20,21] Chipping-off…”

Section: Materials Remove Rate (Mm 3 /Min) Challenges Referencementioning

confidence: 99%

“…Table 1. Comparison of methods used in processing of silicon wafers [6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21].…”

Section: Introductionmentioning

confidence: 99%

“…The preparation of semiconductor wafers involves a series of manufacturing processes, including seeding, crystal growth, slicing into wafers, grinding, chemical-mechanical polishing, electrical-chemical etching, and coating [ 1 , 2 , 3 , 4 , 5 ]. Table 1 lists the comparisons of the methods in the processing of silicon wafers [ 6 , 7 , 8 , 9 , 10 , 11 , 12 , 13 , 14 , 15 , 16 , 17 , 18 , 19 , 20 , 21 ]. The extreme hardness (~10 GPa) and strength (170 GPa) of the monocrystalline substrate materials necessitates the use of wire-saw slicing [ 6 , 7 , 8 , 9 , 10 , 11 ] and diamond grit grinding [ 12 , 13 , 14 , 15 , 16 ].…”

Section: Introductionmentioning

confidence: 99%

“…Table 1 lists the comparisons of the methods in the processing of silicon wafers [ 6 , 7 , 8 , 9 , 10 , 11 , 12 , 13 , 14 , 15 , 16 , 17 , 18 , 19 , 20 , 21 ]. The extreme hardness (~10 GPa) and strength (170 GPa) of the monocrystalline substrate materials necessitates the use of wire-saw slicing [ 6 , 7 , 8 , 9 , 10 , 11 ] and diamond grit grinding [ 12 , 13 , 14 , 15 , 16 ]. Diamond-coated wire saws slice through the silicon ingot easily; however, the low fracture toughness (0.7 MPa·m 1/2 ) often leads to collapse pits [ 6 , 7 , 8 , 9 , 11 ], cracking [ 7 , 8 ], and scratching grooves [ 6 , 7 , 8 , 9 , 10 , 11 ].…”

Section: Introductionmentioning

confidence: 99%

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Surface Modification Using Assisting Electrodes in Wire Electrical Discharge Machining for Silicon Wafer Preparation

et al. 2021

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This paper outlines notable advances in the wire electrical discharge machining of polycrystalline silicon workpieces for wafer preparation. Our use of assisting electrodes permits the transfer of aluminum particles to the machined surface of the polycrystalline silicon workpieces, to enhance conductivity and alter surface topography regardless of the silicon’s crystallographic structure and diamond-type lattice. This in-process surface modification technique was shown to promote material removal and simultaneously preserve the integrity of the machined surfaces with preferable surface textures. In the validation experiment, the 25 mm-thick assisting electrodes deposited a notable concentration of aluminium on the machined surface (~3.87 wt %), which greatly accelerated the rate of material removal (~9.42 mg/s) with minimal surface roughness (Sa ~5.49 μm) and moderate skewness (−0.23). The parameter combination used to obtain the optimal surface roughness (Sa 2.54 μm) was as follows: open voltage (80 V), electrical resistance (1.7 Ω), pulse-on time (30 μs), and electrode thickness (15 mm). In multiple objective optimization, the preferred parameter combination (open voltage = 80 V, resistance = 1.4 Ω, pulse-on time = 60 μs, and assisting electrode thickness = 25 mm) achieved the following appreciable results: surface modification of 3.26 ± 0.61 wt %, material removal rate of 7.08 ± 2.2 mg/min, and surface roughness of Sa = 4.3 ± 1.67 μm.

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Section: Materials Remove Rate (Mm 3 /Min) Challenges Referencementioning

confidence: 99%

“…Table 1. Comparison of methods used in processing of silicon wafers [6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21].…”

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Surface Modification Using Assisting Electrodes in Wire Electrical Discharge Machining for Silicon Wafer Preparation

et al. 2021

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“…Ceramics are an important hard-brittle material for the semiconductor and photovoltaic industries. Wire-sawing technology (contains SWSM and MWSM) is the most efficient and economic tool for machining hard-brittle materials, such as silicon, SiC, ceramic, and sapphire for the photovoltaic or semiconductor industries [ 1 , 2 , 3 ]. A single-wire saw consists of a thin steel wire wound around wire-guides, forming a web of parallel wires (namely SWSM).…”

Section: Introductionmentioning

confidence: 99%

Slicing Ceramics on Material Removed by a Single Abrasive Particle

Tsai

Liao

et al. 2020

Materials

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Multi-wire saw machining (MWSM) used for slicing hard-brittle materials in the semiconductor and photovoltaic industries is an important and efficient material removal process that uses free abrasives. The cutting model of single-wire saw machining (SWSM) is the basis of MWSM. The material removal mechanism of SWSM is more easily understood than MWSM. A mathematical model (includes brittle fracture and plastic deformation) is presented in this paper for SWSM ceramic with abrasives. This paper determines the effect of various machining parameters on the removal of hard-brittle materials. For brittle fracture of SWSM ceramics, the minimum strain energy density is used as a fracture criterion. For plastic deformation of SWSM ceramics, the material removal is calculated using equations of motion. Actual wire-sawing experiments are conducted to verify the results of the developed mathematical model. The theoretical results agree with experimental data and practical experience. From the developed mathematical model, brittle fracture plays a major role in material removal of SWSM ceramics. Wire speed (S) and working load (P) are positively correlated with material removal of SWSM ceramics. The coefficient of friction is low, a lateral crack, which propagates almost parallel to the working surface, leads to more brittle fracture and material removal is increased.

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Study on efficient drying process of industrial silicon powder

Li,

Xu,

et al. 2024

Env Prog and Sustain Energy

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The drying procedure is an important consideration for the silicon powder processing. Herein, a comparative investigation of the drying efficiency, drying performance, and energy consumption of silicon powder after separation and purification of monocrystal silicon cutting slurry by using the hot air, far‐infrared and microwave drying treatments. The results show that microwave drying of 30 g silicon powder takes only 12 min, which is much shorter than hot air drying of 200 min and far infrared drying of 40 min. The water evaporation energy consumption of microwave drying reached 73.5 g/kW·h, which was 3.3 times than that of far infrared drying and 16.5 times than that of hot air drying. For 1 kg of silicon powder, the power consumption of microwave drying was 8 kW·h, while the far‐infrared drying was 26.7 kW·h, and the hot air drying was 133.4 kW·h, respectively. Therefore, effects of microwave power, drying temperature and drying time on the dehydration rate of silicon powder were investigated and optimized by response surface method, demonstrating that the microwave drying dehydration rate of 30 g silicon powder could reach 97.65%, and the power consumption could be reduced to 6.7 kW·h/kg under the conditions of microwave power of 1000 W, drying temperature of 89°C and drying time of 12 min. The present study shows that microwave drying of silicon powder is an energy‐saving and efficient process with good industrial application prospects.

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Evaluation of fixed abrasive diamond wire sawing induced subsurface damage of solar silicon wafers

Cited by 54 publications

References 41 publications

Surface Modification Using Assisting Electrodes in Wire Electrical Discharge Machining for Silicon Wafer Preparation

Surface Modification Using Assisting Electrodes in Wire Electrical Discharge Machining for Silicon Wafer Preparation

Slicing Ceramics on Material Removed by a Single Abrasive Particle

Study on efficient drying process of industrial silicon powder

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