Evaluation of first 10-kv optical ETO thyristor operating without any low-voltage control bias

Meyer, A. D.; Mojab, Alireza; Mazumder, Sudip K.

doi:10.1109/pedg.2013.6785592

Cited by 16 publications

(8 citation statements)

References 8 publications

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“…13 outlines the structure of the device. The initial results based on different embodiments of OTPTs have been reported in [30], [28], [31] and are encouraging. One such result at high current is shown in Fig. 14.…”

Section: Recent and Ongoing Workmentioning

confidence: 93%

Photonic power electronics: Past, present, and future

Mazumder

2015

2015 IEEE Applied Power Electronics Conference and Exposition (APEC)

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Section: Recent and Ongoing Workmentioning

confidence: 93%

Photonic power electronics: Past, present, and future

Mazumder

2015

2015 IEEE Applied Power Electronics Conference and Exposition (APEC)

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“…Schematic of the conventional optically-triggered (OT) ETO [10] as well as the existing electrically-triggered (ET) ETO, are shown in Fig. 1.…”

Section: Optically-triggered Eto Thyristormentioning

confidence: 99%

“…All of the above solutions require low-voltage biases, making them susceptible to external noise, existing in the HV high-power environment. A novel optically triggered ETO thyristor has been, therefore, presented in [10]- [13] which do not need any low voltage (LV) bias, and uses minimum low voltage devices. However, high di/dt generated by fast switching action of SiC thyristor activates the turn-off path of the gate during turn-on transition, producing a considerable leakage current to the gate of the thyristor.…”

Section: Introductionmentioning

confidence: 99%

New single-bias all-optical ETO configuration for a 15 kV-100A SiC thyristor eliminating the turn-on leakage current

Riazmontazer

Mojab

Rahnamaee

et al. 2015

2015 IEEE Applied Power Electronics Conference and Exposition (APEC)

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In this paper a new single-bias optically-triggered (OT) emitter-turn-off (ETO) configuration for a 15kV-100A SiC thyristor, used in the next generation high-voltage highfrequency and high-power-density applications is outlined. Optical turn-off and turn-on of the OT ETO is achieved using an auxiliary optically-triggered power transistor (OTPT) in the anode path of the SiC thyristor. Leakage current during the turn-on transition of OT ETO is caused by the undesired activation of the turn-off path of the gate of the thyristor. This undesired activation is due to parasitic inductances and high di/dt in the commutation path, resulting in additional switching loss and electro-magnetic noise. In contrast to other works, the proposed method removes the leakage current enhancing the switching performance, reducing the switching loss and EMI. The other feature of the proposed work is using a single highvoltage bias eliminating the need for low-voltage (LV) control bias and devices in conventional methods. The system reliability is increased via using optical link to turn the SiC thyristor on and off, precluding the susceptibility to external noise. The proposed method and the OTPT are respectively verified through simulation and experimental results.

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“…Configuration for ETO Thyristor [4] ETOs are one of the most promising devices in very high voltage fast switching power electronic applications. The novel single-biased all-optically triggered ETO is shown in Fig 12. The device structure of the SiC thyristor is shown in Fig.…”

Section: A New Single-biased All-optically Triggeredmentioning

confidence: 99%

Optical power-electronic technology

Mazumder

Mojab

Riazmontazer

et al. 2014

2014 IEEE 5th International Symposium on Power Electronics for Distributed Generation Systems (PEDG)

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In this paper, a top-level outline on optically-switched power semiconductor dev carried out at the University of Illinois, Chica which UIC has been involved has been outli outline on optical control that affects the switc power semiconductor devices is provided. Disclaimer: This paper emulates an earlier pa authors with the following description and is repr for further visibility and educational outreach Mojab, and H. Riazmontazer, "Optically-switche semiconductor devices and device-transition

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Evaluation of first 10-kv optical ETO thyristor operating without any low-voltage control bias

Cited by 16 publications

References 8 publications

Photonic power electronics: Past, present, and future

Photonic power electronics: Past, present, and future

New single-bias all-optical ETO configuration for a 15 kV-100A SiC thyristor eliminating the turn-on leakage current

Optical power-electronic technology

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