Evaluation of Encapsulation Materials for High-Temperature Power Device Packaging

Locatelli, Marie-Laure; Khazaka, Rabih; Diaham, Sombel; Pham, Congduc; Bechara, Mireille; Dinculescu, Sorin; Bidan, Pierre

doi:10.1109/tpel.2013.2279997

Cited by 65 publications

(27 citation statements)

References 18 publications

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“…Silicone gels belongs to this kind of polymers and are widely retained for encapsulating high voltage multi-chip power assemblies, due to their very high softness and high insulating electrical properties. However, the literature review shows that high temperature commercially available silicone gels exhibit a maximum temperature limit lower than 250 °C for continuous service of operation [57], [106]. The review also reveals that a trade-off between high temperature ability and softness of silicones generally exists.…”

Section: Encapsulationmentioning

confidence: 99%

A Review of SiC Power Module Packaging: Layout, Material System and Integration

2017

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Abstract-Silicon-Carbide (SiC) devices with superior performance over traditional silicon power devices have become the prime candidates for future high-performance power electronics energy conversion. Traditional device packaging becomes a limiting factor in fully realizing the benefits offered by SiC power devices, and thus, improved and advanced packaging structures are required to bridge the gap between SiC devices and their applications. This paper provides a review of the state-of-art advanced module packaging technologies for SiC devices with the focuses on module layout, packaging material system, and module integration trend, and links these packaging advancements to their impacts on the SiC device performances. Through this review, the paper discusses main challenges and potential solutions for SiC modules, which is critical for future SiC applications.Index Terms-Packaging material system, power module integration, SiC advanced packaging.

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Section: Encapsulationmentioning

confidence: 99%

A Review of SiC Power Module Packaging: Layout, Material System and Integration

2017

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“…In addition, wide band gap (WBG) semiconductors, such as silicon carbide (SiC) and gallium nitride (GaN), are developing rapidly for high‐power and high‐frequency applications. These WBG semiconductors undergo a maximal junction temperature higher than 200 °C, which is 50–100 °C higher than typical silicon devices . Epoxy molding compounds (EMCs) are one of the standard encapsulation materials in electronics packaging protecting the integrated circuit (IC) chip from chemical and physical attacks .…”

Section: Introductionmentioning

confidence: 99%

Polyimide incorporated cyanate ester/epoxy copolymers for high‐temperature molding compounds

Song

Hah

et al. 2018

J. Polym. Sci. Part A: Polym. Chem.

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The rapid development of high‐power devices has driven the requirement for high‐temperature stable epoxy molding compounds. In this work, a designed polymer blend system consisting of cyanate ester/epoxy copolymers modified by polyimide (CE/EP‐PI) has been studied. Polyimide used in this study has shown excellent dispersity in the cyanate ester and epoxy copolymer network (CE/EP), exhibiting homogeneous phase with a denser polymer network structure. With this polymer blend structure, CE/EP‐PI system was proved to have a glass transition temperature as high as ~270 °C, increased modulus, and largely enhanced fracture toughness up to 2.06 MPa m1/2. CE/EP‐PI resins showed outstanding long‐term stability at high temperature with low mass loss and increased fracture toughness after aging at 200 °C. This work provides a novel insight into the development of molding compounds based on polymer blends system with excellent high‐temperature properties. © 2018 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2018, 56, 2412–2421

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“…This natural adhesion allows gels to gain physical adhesion to most common surfaces without the need of primers [6]. All these characteristics make silicone gels the most cost-effective choice for IGBT encapsulation, nevertheless, alternative materials have been investigated as a possible replacement [7][8][9][10] for them.…”

Section: Introductionmentioning

confidence: 99%

Analysis of electrical tree inception in silicone gels

Mancinelli

Cavallini

Dodd

et al. 2017

IEEE Trans. Dielect. Electr. Insul.

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This work assesses the initial and crucial part of electrical treeing degradation, the inception stage, focusing on its dependence on applied voltage waveform and frequency. Tests have been performed on needle-plane configuration samples in solids and gels. A physical model has been formulated through an adaptation of an established theory for solids in which electrical tree inception is related to damage-producing injection currents. The voltage rise time appeared to be the most important parameter influencing the tree inception in the gel, while in the solid material the frequency is more relevant. The analysis leads to the conclusion that tree inception in gels is due to a single highenergy event, in contrast to what is commonly known for solids where damage accumulation takes place. A tree inception model is proposed for the gel, in which initiation is driven by a pressure wave generated by the electric field and the space charge injected into the sample. The model fits the experimental data and may be used to predict the tree initiation for different waveforms and voltage values.

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Evaluation of Encapsulation Materials for High-Temperature Power Device Packaging

Cited by 65 publications

References 18 publications

A Review of SiC Power Module Packaging: Layout, Material System and Integration

A Review of SiC Power Module Packaging: Layout, Material System and Integration

Polyimide incorporated cyanate ester/epoxy copolymers for high‐temperature molding compounds

Analysis of electrical tree inception in silicone gels

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