Evaluation of Electron Traps in SiN by Discharging Current Transient Spectroscopy: Verification of Validity by Comparing with Conventional DLTS

Seki, Hirofumi; Mitani, Y.

doi:10.7567/ssdm.2018.e-3-04

Cited by 2 publications

(2 citation statements)

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“…1,2 The performances of these devices strongly depend on the SiN x film qualities that are controlled by the deposition and annealing conditions. For instance, the trap density strongly depends on the chemical composition of the SiN x film 3 and the chemical properties and impurity (e.g., N-H and Si-H) densities of SiN x are affected by annealing. 4 Although single-layer SiN x has been widely studied over the past decades, previous work on the effects of annealing on the properties of SiN x films within multi-layer stacked structures is insufficient.…”

Section: Introductionmentioning

confidence: 99%

Effects of post‐deposition annealing on chemical composition of SiN_x film in SiO₂/SiN_x/SiO₂/Si stacked structure

Sakata

Ogawa

Inoue

et al. 2022

Surface & Interface Analysis

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To systematically evaluate the quality of SiNx films in multi‐stacked structures, we investigated the effects of post‐deposition annealing (PDA) on the film properties of SiNx within the SiO2/SiNx/SiO2/Si stacked structure by performing X‐ray photoelectron spectroscopy (XPS), X‐ray reflectivity (XRR), Fourier transform infrared (FT‐IR) spectroscopy, and scanning transmission electron microscope–electron energy loss spectroscopy (STEM‐EELS) analyses. The XPS results showed that PDA induces the oxidation of the SiNx layer. In particular, new finding is that Si‐rich SiNx in the SiNx layer is preferentially oxidized by PDA even in multi‐stacked structure. The XRR results showed that the SiNx layer becomes thinner, whereas the interface layer between the SiNx layer and Si becomes thicker. It is concluded by STEM‐EELS and XPS that this interface layer is SiON layer. The density of N–H and Si–H bonding within the stacked structure strongly depends on the PDA temperature. Our study helps elucidate the properties of SiNx films in stacked structures from various perspectives.

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Section: Introductionmentioning

confidence: 99%

Effects of post‐deposition annealing on chemical composition of SiN_x film in SiO₂/SiN_x/SiO₂/Si stacked structure

Sakata

Ogawa

Inoue

et al. 2022

Surface & Interface Analysis

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“…DCTS and DLTS are similar methods where the observation is the transient response caused by electron emission from traps, but the response is detected as current and capacitance in DCTS and DLTS, respectively. We discuss the validity of the DCTS technique for the evaluation of electron traps by comparing the trap energy level with that obtained by DLTS 21) and also investigate more from the viewpoint of trap density.…”

Section: Introductionmentioning

confidence: 99%

Evaluation of electron traps in SiN_x by discharge current transient spectroscopy: verification of validity by comparing with conventional DLTS

Seki¹,

Yamamoto²,

Mitani³

2019

Jpn. J. Appl. Phys.

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Discharge current transient spectroscopy (DCTS) is a promising technique for detecting the trap level and density in dielectrics because it is based on a simple emission process. In order to confirm the validity of DCTS, we compare the results from the conventional deep-level transient spectroscopy (DLTS) technique for samples of CVD-grown silicon nitride (SiNx) films. Results indicated that a trap level, about 0.6 eV below the energy level of the conduction band edge in the SiNx thin films estimated by DCTS is in good agreement with that obtained from DLTS analysis, and it is found that the trap density increases with the decreasing N/Si ratio in the SiNx film. As a proposed estimation for energy level in defects, it will be originated from hydrogen-incorporated defects in the SiNx matrix. This study demonstrates that the DCTS method will be a useful electrical method for the evaluation of defects.

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Evaluation of Electron Traps in SiN by Discharging Current Transient Spectroscopy: Verification of Validity by Comparing with Conventional DLTS

Cited by 2 publications

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Effects of post‐deposition annealing on chemical composition of SiN_x film in SiO₂/SiN_x/SiO₂/Si stacked structure

Effects of post‐deposition annealing on chemical composition of SiN_x film in SiO₂/SiN_x/SiO₂/Si stacked structure

Evaluation of electron traps in SiN_x by discharge current transient spectroscopy: verification of validity by comparing with conventional DLTS

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Evaluation of Electron Traps in SiN by Discharging Current Transient Spectroscopy: Verification of Validity by Comparing with Conventional DLTS

Cited by 2 publications

References 0 publications

Effects of post‐deposition annealing on chemical composition of SiNx film in SiO2/SiNx/SiO2/Si stacked structure

Effects of post‐deposition annealing on chemical composition of SiNx film in SiO2/SiNx/SiO2/Si stacked structure

Evaluation of electron traps in SiNx by discharge current transient spectroscopy: verification of validity by comparing with conventional DLTS

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Effects of post‐deposition annealing on chemical composition of SiN_x film in SiO₂/SiN_x/SiO₂/Si stacked structure

Effects of post‐deposition annealing on chemical composition of SiN_x film in SiO₂/SiN_x/SiO₂/Si stacked structure

Evaluation of electron traps in SiN_x by discharge current transient spectroscopy: verification of validity by comparing with conventional DLTS