Evaluation of different models for the dissociation of silane on the Si(111)7×7 surface using the extended Brenner empirical potential

Que, Jian-Zhong; Radny, Marian W.; Smith, P. V.

doi:10.1016/s0039-6028(03)00838-0

Cited by 2 publications

(1 citation statement)

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“…, where P corresponds to pressure and S to the incident surface. For silane we obtain result very similar to its interaction onto silicon surface [13][14][15][16][17][18][19][20] : C(SiH 4 /SiO 2 ) = 10 -6 to 10 -7…”

Section: Dft Calculations On the Sio 2 Surfacesupporting

confidence: 65%

Modeling of Silicon Nanodots Nucleation and Growth Deposited by LPCVD on SiO2 : From Molecule/surface Interactions to Reactor Scale Simulations

et al. 2006

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We present first results combining models at continuum and atomistic (DFT) levels to improve understanding of key mechanisms involved in silicon nanodots (NDs) synthesis on SiO2 by Low Pressure Chemical Vapor Deposition (LPCVD) from silane SiH4. In particular, by simulating an industrial LPCVD reactor using the CFD code Fluent, we find that the deposition time could be increased and then the reproducibility and uniformity of NDs deposition could be improved when highly diluting silane in a carrier gas. A consequence of this high dilution seems to be that the contribution to deposition of unsaturated species such as silylene SiH2 highly increases. This result is important since our first DFT calculations have shown that silicon chemisorption on silanol Si-OH or siloxane Si-O-Si bonds present on SiO2 substrates could only proceed from silylene (and probably from other unsaturated species). The silane saturated molecule could only contribute to NDs growth, i.e. silicon chemisorption on already deposited silicon bonds. Increasing silylene contribution to deposition in highly diluting silane could then also exalt silicon nucleation on SiO2 substrates and then increase NDs density.

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