Evaluation of Crystalline Volume Fraction of Laser-Annealed Polysilicon Thin Films Using Raman Spectroscopy and Spectroscopic Ellipsometry

Pyo, Jeongsang; Lee, Bohae; Ryu, Han-Youl

doi:10.3390/mi12080999

Cited by 6 publications

(4 citation statements)

References 37 publications

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“…The high absorption of a-Si prevents the ultraviolet light from penetrating the substrate, preventing the substrate from heating. This characteristic enables a low-temperature process, making it permittable for heat-vulnerable substrates and enabling the fabrication of flexible electronics using poly-Si [326][327][328].…”

Section: Excimer Laser Annealingmentioning

confidence: 99%

Novel fabrication techniques for ultra-thin silicon based flexible electronics

Lee,

Ju,

Lee

et al. 2024

Int. J. Extrem. Manuf.

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Flexible electronics offer a multitude of advantages, such as flexibility, lightweight properties, portability, and high durability. These unique properties allow for seamless applications to curved and soft surfaces, leading to extensive utilization across a wide range of fields in consumer electronics. These applications, for example, span integrated circuits, solar cells, batteries, wearable devices, bio-implants, soft robotics, and biomimetic applications. Recently, flexible electronic devices have been developed using a variety of materials such as organic, carbon-based, and inorganic semiconducting materials. Silicon (Si) owing to its mature fabrication process, excellent electrical, optical, thermal properties, and cost-efficiency, remains a compelling material choice for flexible electronics. Consequently, the research on ultra-thin Si in the context of flexible electronics is studied rigorously nowadays. The thinning of Si is crucially important for flexible electronics as it reduces its bending stiffness and the resultant bending strain, thereby enhancing flexibility while preserving its exceptional properties. This review provides a comprehensive overview of the recent efforts in the fabrication techniques for forming ultra-thin Si using top-down and bottom-up approaches and explores their utilization in flexible electronics and their applications.

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Section: Excimer Laser Annealingmentioning

confidence: 99%

Novel fabrication techniques for ultra-thin silicon based flexible electronics

Lee,

Ju,

Lee

et al. 2024

Int. J. Extrem. Manuf.

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show abstract

“…It is essential to maintain the temperature within the a-Si layer above its melting point (1420 K) for effective transformation while ensuring it stays below the boiling point of silicon (3538 K) to prevent vaporization. Simultaneously, the temperature of the SiO 2 layer beneath the a-Si layer must be kept below the melting point of SiO 2 (1986 K) to prevent thermal damage [ 13 ]. This meticulous temperature control is critical for optimizing the crystallization process and preserving the integrity of the underlying SiO 2 layer [ 14 ].…”

Section: Polycrystalline Siliconmentioning

confidence: 99%

Formation techniques for upper active channel in monolithic 3D integration: an overview

Nguyen,

Nguyen

et al. 2024

Nano Convergence

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The concept of three-dimensional stacking of device layers has attracted significant attention with the increasing difficulty in scaling down devices. Monolithic 3D (M3D) integration provides a notable benefit in achieving a higher connection density between upper and lower device layers than through-via-silicon. Nevertheless, the practical implementation of M3D integration into commercial production faces several technological challenges. Developing an upper active channel layer for device fabrication is the primary challenge in M3D integration. The difficulty arises from the thermal budget limitation for the upper channel process because a high thermal budget process may degrade the device layers below. This paper provides an overview of the potential technologies for forming active channel layers in the upper device layers of M3D integration, particularly for complementary metal-oxide-semiconductor devices and digital circuits. Techniques are for polysilicon, single crystal silicon, and alternative channels, which can solve the temperature issue for the top layer process.

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“…In order to provide a comprehensive analysis of annealing in the visible range, Pyo et al [54] investigated the polycrystalline silicon obtained through green laser annealing (GLA) using a 532 nm nanosecond pulsed laser and blue laser annealing (BLA) using a 450 nm continuous wave laser. For GLA, the second harmonic of a Q-switched Nd:YAG laser was utilized with a scanning speed of 4 cm/s, a pulse repetition rate of 30 kHz, and a pulse width of 30 ns.…”

Section: Silicon Laser Annealingmentioning

confidence: 99%

Silicon and Silicon Carbide Recrystallization by Laser Annealing: A Review

Arduino,

Stassi,

Spano

et al. 2023

Materials

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Modifying material properties within a specific spatial region is a pivotal stage in the fabrication of microelectronic devices. Laser annealing emerges as a compelling technology, offering precise control over the crystalline structure of semiconductor materials and facilitating the activation of doping ions in localized regions. This obviates the necessity for annealing the entire wafer or device. The objective of this review is to comprehensively investigate laser annealing processes specifically targeting the crystallization of amorphous silicon (Si) and silicon carbide (SiC) samples. Silicon finds extensive use in diverse applications, including microelectronics and solar cells, while SiC serves as a crucial material for developing components designed to operate in challenging environments or high-power integrated devices. The review commences with an exploration of the underlying theory and fundamentals of laser annealing techniques. It then delves into an analysis of the most pertinent studies focused on the crystallization of these two semiconductor materials.

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Evaluation of Crystalline Volume Fraction of Laser-Annealed Polysilicon Thin Films Using Raman Spectroscopy and Spectroscopic Ellipsometry

Cited by 6 publications

References 37 publications

Novel fabrication techniques for ultra-thin silicon based flexible electronics

Novel fabrication techniques for ultra-thin silicon based flexible electronics

Formation techniques for upper active channel in monolithic 3D integration: an overview

Silicon and Silicon Carbide Recrystallization by Laser Annealing: A Review

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