Abstract:1. Background and purpose
Currently, it is expected that Ru is going to be introduced in place of Cu, which is the mainstream interconnect material in the very large scale integrated (VLSI) circuit. As high integration has been proceeding, the interconnect is expected not only having excellent electrical characteristics and reliability, but also providing an effective pathway for the removal of the heat generated by device operation [1]. The increasing current density in the narrowing interconnect produces Jou… Show more
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