Evaluation of a semiconductor-based atmospheric radioxenon detection system

Czyz, Steven A.; Farsoni, Abi T.; Gadey, Harish R.

doi:10.1016/j.nima.2019.162614

Cited by 5 publications

(1 citation statement)

References 23 publications

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“…Cadmium zinc telluride (CdZnTe) emerges as the leading semiconductor crystals for fabricating room-temperature x-ray and gamma-ray detectors, which were widely used in nuclear medical images, non-destructive inspection, scientific xray and gamma-ray imaging and spectroscopy. [1][2][3] However, various structural defects were inevitably induced into crystals during the complex crystal growth process, which is harmful to the carrier transport process and collection seriously via carrier trapping and recombination effect. [4] Especially when the detector worked in the high counting rate mode, the accumulation of the space charge at defect levels will cause electric field distortion and thus seriously deteriorate device performance.…”

Section: Introductionmentioning

confidence: 99%

Influence of sub-bandgap illumination on space charge distribution in CdZnTe detector*

Guo¹,

Lin²,

Liu³

et al. 2021

Chinese Phys. B

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The space charge accumulation in CdZnTe crystals seriously affects the performance of high-flux pulse detectors. The influence of sub-bandgap illumination on the space charge distribution and device performance in CdZnTe crystals were studied theoretically by Silvaco TCAD software simulation. The sub-bandgap illumination with a wavelength of 890 nm and intensity of 8 × 10−8 W/cm2 were used in the simulation to explore the space charge distribution and internal electric field distribution in CdZnTe crystals. The simulation results show that the deep level occupation faction is manipulated by the sub-bandgap illumination, thus space charge concentration can be reduced under the bias voltage of 500 V. A flat electric field distribution is obtained, which significantly improves the charge collection efficiency of the CdZnTe detector. Meanwhile, premised on the high resistivity of CdZnTe crystal, the space charge concentration in the crystal can be further reduced with the wavelength of 850 nm and intensity of 1 × 10−7 W/cm2 illumination. The electric field distribution is flatter and the carrier collection efficiency of the device can be improved more effectively.

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