Evaluation of a New Polish for Gallium Arsenide Using a Peroxide-Alkaline Solution

Dyment, J. C.; Rozgonyi, G. A.

doi:10.1149/1.2408319

Cited by 55 publications

(20 citation statements)

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“…4 (right). The elemental A1 and products including Ga and As in the native oxide-film are easily reduced in comparison with GaA1As epitaxial layers, which is reasonable because the solution employed is one of wellknown etchants for GaAs (5,6). The solid lines in Fig.…”

mentioning

confidence: 89%

Chromium‐Doped Raney Nickel Catalyst for Hydrogen Electrodes in Alkaline Fuel Cells

Kenjo

1985

J. Electrochem. Soc.

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confidence: 89%

Chromium‐Doped Raney Nickel Catalyst for Hydrogen Electrodes in Alkaline Fuel Cells

Kenjo

1985

J. Electrochem. Soc.

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“…10 Hydrogen peroxide has been preferred because it leads to smoother polished GaAs surfaces as well as good material removal rates. 6,9 In this work, we investigated GaAs removal rates in the presence of H 2 O 2 and silica particles and compared them with those obtained in the presence of other oxidizers such as sodium iodate and sodium periodate. The pH of the aqueous phase of the slurry and the type of oxidizer were both found to have a strong effect on material removal * Electrochemical Society Active Member.…”

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confidence: 99%

“…[6][7][8][9] McGhee et al 6 proposed a three step mechanism for GaAs removal in an aqueous solution containing H 2 O 2 and ammonia. An oxohydroxyl layer, consisting of sparingly soluble oxohydroxides of Ga and As, was first formed on the surface.…”

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confidence: 99%

Fundamental Investigation of Chemical Mechanical Polishing of GaAs in Silica Dispersions: Material Removal and Arsenic Trihydride Formation Pathways

Matovu

Ong

Leunissen

et al. 2013

ECS J. Solid State Sci. Technol.

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The fabrication of InGaAs n-channels in CMOS devices requires an intervening buffer layer of GaAs or InP between a Si substrate and the InGaAs channel layer, which has to be planarized to enable the growth of a channel that is free of defects due to uneven surface topography. This report discusses the material removal rates (RRs) and AsH 3 evolution observed during chemical mechanical polishing (CMP) of GaAs using aq. solutions of hydrogen peroxide (H 2 O 2 ) and silica slurries containing H 2 O 2 . GaAs RRs were negligible with deionized water or with silica slurries alone. They were relatively high in aq. solutions of H 2 O 2 alone and showed a strong pH-dependence, with significantly higher RRs in the alkaline region. The addition of silica particles to aq. H 2 O 2 did not increase the GaAs RRs significantly. The evolution of arsenic trihydride (AsH 3 ) during the dissolution of GaAs in aq. H 2 O 2 solution was similarly higher in the basic pH range than in neutral pH or in the acidic pH range. However, no AsH 3 was measured during polishing, evidently because of the relatively high water solubility of AsH 3 . In this report, GaAs removal rates and AsH 3 formation are analyzed using data from contact angle measurements, X-Ray photoelectron spectroscopy (XPS), and X-Ray fluorescence (XRF) spectroscopy. Reaction pathways leading to material removal are proposed.The quest for faster devices in the microelectronic industry has renewed interest in III-V materials such as InP, GaAs, and InGaAs as n-channel candidates because of their high electron mobility. 1,2 During the fabrication of n-channels in CMOS devices, chemical mechanical polishing (CMP) of these materials is required to achieve a smooth and planar surface to enable further processing. There are several environmental health and safety (EHS) issues associated with polishing and wet processing of these III-V materials. 2-5 The EHS concerns for As containing materials include the evolution of toxic arsenic trihydride (AsH 3 ) gas, and the handling of arsenic contaminated slurry waste and used consumables (e.g., polishing pads). For InP, the major concern has been the generation of toxic phosphine gas during polishing. 3,4 In this work, the focus is on the chemical mechanical polishing of GaAs and evolution of AsH 3 .There are several reports on the CMP of GaAs using slurries that contain oxidizers such as hydrogen peroxide (H 2 O 2 ), sodium hypochlorite (NaOCl), and dibromine (Br 2 ). 6-9 McGhee et al. 6 proposed a three step mechanism for GaAs removal in an aqueous solution containing H 2 O 2 and ammonia. An oxohydroxyl layer, consisting of sparingly soluble oxohydroxides of Ga and As, was first formed on the surface. These oxohydroxides were converted to soluble species upon complexation with aq. NH 3 . The soluble species were then removed from the surface by mechanical wiping. In Br 2 -MeOH solutions, they proposed that an adsorbed Br layer was formed on the GaAs surface. The adsorption of bromine was followed by a redox reaction, which continued as lo...

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“…In addition to the work of Dyment and Rozgonyi (1971) and Gannon and Nuese (1974), other applications have shown the H 2 O 2 -NH 4 OH-H 2 O system to be ideal for GaAs etching. Because of its anisotropic nature and polishing ability, Jones and Walker (1990) recommended its use for the etching of vertical sidewalls, first produced by reactive ion etching.…”

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confidence: 99%

Kinetics of GaAs Dissolution in H₂O₂−NH₄OH−H₂O Solutions

Bryce

Berk

1996

Ind. Eng. Chem. Res.

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GaAs, a compound semiconductor commonly used in optoelectronic devices, is often subjected to wet-etching techniques during microelectronic device manufacture. In this work we investigated the wet etching of GaAs by H2O2−NH4OH−H2O solutions using a batch stirred-tank reactor and determined the intrinsic kinetics of the dissolution reaction. Increasing the NH4OH content produced a constant rate above a minimum concentration. The reaction rate was found, in the presence of excess NH4OH, to fit a rate equation r = k[H2O2]0.75 at 15, 25, and 40 °C with an activation energy of 33.7 kJ/mol. Using NaOH instead of NH4OH resulted in greatly reduced reaction rates, and it was concluded that the presence of the ammonium ion increases the rate by forming soluble compounds with oxidized species of Ga and As. Analysis of the surface by X-ray photon spectroscopy confirmed that samples etched in solutions containing NH4OH had considerably less oxide content on the surface than that etched in H2O2−H2O only. NH4OH does not directly react with GaAs but incorporates a second step into the overall etch reaction, facilitating the oxidation by H2O2 and the formation of soluble compounds.

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Evaluation of a New Polish for Gallium Arsenide Using a Peroxide-Alkaline Solution

Cited by 55 publications

References 2 publications

Chromium‐Doped Raney Nickel Catalyst for Hydrogen Electrodes in Alkaline Fuel Cells

Chromium‐Doped Raney Nickel Catalyst for Hydrogen Electrodes in Alkaline Fuel Cells

Fundamental Investigation of Chemical Mechanical Polishing of GaAs in Silica Dispersions: Material Removal and Arsenic Trihydride Formation Pathways

Kinetics of GaAs Dissolution in H₂O₂−NH₄OH−H₂O Solutions

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Evaluation of a New Polish for Gallium Arsenide Using a Peroxide-Alkaline Solution

Cited by 55 publications

References 2 publications

Chromium‐Doped Raney Nickel Catalyst for Hydrogen Electrodes in Alkaline Fuel Cells

Chromium‐Doped Raney Nickel Catalyst for Hydrogen Electrodes in Alkaline Fuel Cells

Fundamental Investigation of Chemical Mechanical Polishing of GaAs in Silica Dispersions: Material Removal and Arsenic Trihydride Formation Pathways

Kinetics of GaAs Dissolution in H2O2−NH4OH−H2O Solutions

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Kinetics of GaAs Dissolution in H₂O₂−NH₄OH−H₂O Solutions