Evaluation of 1200 V-Si-IGBTs and 1300 V-SiC-JFETs for application in three-phase very sparse matrix AC-AC converter systems

Experimental Efficiency Comparison Between a Direct Matrix Converter and an Indirect Matrix Converter Using Both Si IGBTs and SiC <sc>mosfet</sc>s

“… Using only the output stage(this is indicated on the paper as modulation one) [24]  Using only the input stage, (this is indicated on the paper as modulation two) [25], [26] Note that the time domain waveforms of the input current and the output voltage (and hence their spectra) are independent of which of the two different modulations are used. This is because, at the output, the same line-to-line voltage is applied to the load in both cases and also during either zero vector, the input current is zero in both instances.…”

“…Due to variability between the device operating conditions in the converter and those used in the data sheet measurements, the resulting loss values can be subject to considerable error. Accordingly the models are further developed to use data based on average values found during experimentation; this model is similar to [25]- [27] and it does not consider the effect of dead time and the commutation delay time on the conduction losses since this is a very small part of the conduction period for any particular switch. For the DMC the complete analysis is done in [20] so it is not reported here.…”

Experimental comparison of devices thermal cycling in direct matrix converters (DMC) and Indirect Matrix Converters (IMC) using SiC MOSFETs

“…Hence the use of SiC devices can lead to a reduction in the input filter weight and volume for a given input power quality as well as improvements in converter efficiency, which in turn leads to reduced heat sink size and weight. Some scientific papers, which consider the design and construction of DMCs [7]- [9] and IMCs [10]- [12], in particular utilizing SiC JFETs and SiC MOSFETs [11], have recently appeared in scientific literature. Moreover in [5] authors report an experimental comparison of the two Matrix Converter topologies using traditional Si IGBTs and diodes based on the converters efficiency.…”

“…• Using only the output stage, referred to as modulation one [3], [5] • Using also the input stage, referred to as modulation three [5], [12], [16] Table I shows the switching sequence for a particular input/output sector when using a double-sided symmetrical arrangement of the active vectors and zero vectors. The vectors are arranged to minimize the number of commutations per modulation period and to use the three different types of zero vector.…”

Milestones in Matrix Converter Research

“…This device concept was reconsidered in 2007 by Morita et al from MatsushitaPanasonic for a GaN-based MBS for MCs using normally-off gate injection transistors (108) . The performance and potential of the SiC switch technology for MCs was investigated by a semiconductor loss analysis of Schafmeister et al in 2003 (109) and Domes et al in 2005 (110) . In 2007, Friedli et al investigated and experimentally verified the feasibility and operating behavior of a high-switching-frequency SiC Sparse Matrix Converter using a cascode configurations of a low-voltage Si MOSFET and a 1200 V normally-on SiC JFET and an All-SiC JFET IMC (111) and later, in 2009, an All-SiC JFET CMC (112) (113) .…”