Evaluating Work-Function and Composition of ErSi_xon Various Surface Orientation of Silicon

Abstract

The work function of ErSi X on different surface orientation of Si was evaluated. ErSi X was formed by suppressing of the oxidation during the Si surface cleaning, Er sputtering, and silicidation annealing. Almost ideal Schottky diode properties are obtained on every surface orientation. The work function of ErSi X depends on the surface orientation and deposited Er thickness. The work function of ErSi X on Si(100) decreases and that on Si(551) increases with the increasing Er thickness. In addition, the work function ErSi X on Si(111) for the thickness less than 5 nm is constant and very low value of about 0.25 eV. These work function values depend on Si concentration in ErSi X , and it is considered that the concentration difference is caused by the lattice mismatch between ErSi 2 and Si surface.