Evaluating the Optical Response of Heavily Decorated Black Silicon Based on a Realistic 3D Modeling Methodology

Li, Yuhang; Wang, Dong; Liang, Zhengchen; Zeng, Lingxiao; Li, Wenxue; Xie, Peng; Ding, Qi; Zhang, Hong; Schaaf, Peter; Wang, Wei

doi:10.1021/acsami.2c05652

Cited by 6 publications

(6 citation statements)

References 38 publications

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“…They are unfavorable for an accurate description of the distribution of the electric field and shielding strengths in the case of disordered and irregular nanostructured cold cathodes with complex geometrical structures. Therefore, a 3D model based on the surface morphology of BS was applied to the numerical simulation of field emission. This model not only accurately demonstrates the electric field distribution at the tip, ridge, and bottom of the cone but also the influence of the surface geometrical structure on the field emission performance.…”

Section: Resultsmentioning

confidence: 99%

Evaluating the Field Emission Properties of N-Type Black Silicon Cold Cathodes Based on a Three-Dimensional Model

Zhang,

Cheng,

Wang

et al. 2024

ACS Appl. Mater. Interfaces

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Black silicon (BS), a nanostructured silicon surface containing highly roughened surface morphology, has recently emerged as a promising candidate for field emission (FE) cathodes in novel electron sources due to its huge number of sharp tips with ease of large-scale fabrication and controllable geometrical shapes. However, evaluating the FE performance of BS-based nanostructures with high accuracy is still a challenge due to the increasing complexity in the surface morphology. Here, we demonstrate a 3D modeling methodology to fully characterize highly disordered BSbased field emitters randomly distributed on a roughened nonflat surface. We fabricated BS cathode samples with different morphological features to demonstrate the validity of this method. We utilize parametrized scanning electron microscopy images that provide high-precision morphology details, successfully describing the electric field distribution in field emitters and linking the theoretical analysis with the measured FE property of the complex nanostructures with high precision. The 3D model developed here reveals a relationship between the field emission performance and the density of the cones, successfully reproducing the classical relationship between current density J and electric field E (J−E curve). The proposed modeling approach is expected to offer a powerful tool to accurately describe the field emission properties of large-scale, disordered nano cold cathodes, thus serving as a guide for the design and application of BS as a field electron emission material.

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Section: Resultsmentioning

confidence: 99%

Evaluating the Field Emission Properties of N-Type Black Silicon Cold Cathodes Based on a Three-Dimensional Model

Zhang,

Cheng,

Wang

et al. 2024

ACS Appl. Mater. Interfaces

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“…Among the investigated substrates, the bSi-EL and bSi-evap substrates exhibit the highest signal intensities under the specific measurement conditions. A likely origin for these higher signal intensities is that the black Si structure introduces nanocavities for impinging IR light, leading to increased light absorption by the Au nanoparticles and, thus, increased plasmonic enhancements . Nevertheless, it is important to note that the enhancement is subject to large substrate-to-substrate variations that likely arise from the complex nanostructures of the deposited Au layers.…”

Section: Resultsmentioning

confidence: 99%

Nanostructured Black Silicon as a Stable and Surface-Sensitive Platform for Time-Resolved In Situ Electrochemical Infrared Absorption Spectroscopy

Rauh,

Dittloff,

Thun

et al. 2024

ACS Appl. Mater. Interfaces

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Attenuated total reflection surface-enhanced infrared absorption spectroscopy (ATR-SEIRAS) is a powerful method for probing interfacial chemical processes. However, SEIRAS-active nanostructured metallic thin films for the in situ analysis of electrochemical phenomena are often unstable under biased aqueous conditions. In this work, we present a surface-enhancing structure based on etched black Si internal reflection elements with Au-coatings for in situ electrochemical ATR-SEIRAS. Using electrochemical potential-dependent adsorption and desorption of 4-methoxypyridine on Au, we demonstrate that black Si-based substrates offer advantages over commonly used structures, such as electroless-deposited Au on Si and electrodeposited Au on ITOcoated Si, due to the combination of high stability, sensitivity, and conductivity. These characteristics are especially valuable for time-resolved measurements where stable substrates are required over extended times. Furthermore, the low sheet resistance of Au layers on black Si reduces the RC time constant of the electrochemical cell, enabling a significantly higher time resolution compared to that of traditional substrates. Thus, we employ black Si-based substrates in conjunction with rapid-and step-scan Fourier transform infrared (FTIR) spectroscopy to investigate the adsorption and desorption kinetics of 4-methoxypyridine during in situ electrochemical potential steps. Adsorption is shown to be diffusionlimited, which allows for the determination of the mean molecular area in a fully established monolayer. Moreover, no significant changes in the peak ratios of vibrational modes with different orientations relative to the molecular axis are observed, suggesting a single adsorption mode and no alteration of the average molecular orientation during the adsorption process. Overall, this study highlights the enhanced performance of black Si-based substrates for both steady-state and time-resolved in situ electrochemical ATR-SEIRAS, providing a powerful platform for kinetic and mechanistic investigations of electrochemical interfaces.

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“…Next, the density of SiNW arrays was quantitatively counted by using the method of image binarization in MATLAB [33]. Due to the lodging and aggregation of SiNWs, it is not easy to directly calculate the density of SiNW arrays according to the top-view images.…”

Section: Resultsmentioning

confidence: 99%

Modulating the density of silicon nanowire arrays for high-performance hydrovoltaic devices

Zhang,

Sheng

et al. 2024

Nanotechnology

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Hydrovoltaic devices (HDs) based on silicon nanowire (SiNW) arrays have received intensive attention due to their simple preparation, mature processing technology, and high output power. Investigating the impact of structure parameters of SiNWs on the performance of HDs can guide the optimization of the devices, but related research is still not sufficient. This work studies the effect of the SiNW density on the performance of HDs. SiNW arrays with different densities were prepared by controlling the react time of Si wafers in the seed solution (tseed) in metal-assisted chemical etching (MACE). the density of SiNW array gradually decreases with the increase of tseed. HDs were fabricated based on SiNW arrays with different densities. The research results indicate that the open-circuit voltage gradually decreases with increasing tseed, while the short-circuit current first increases and then decreases with increasing tseed. Overall, SiNW devices with tseed of 20 s and 60 s have the best output performance. The difference in output performance of HDs based on SiNWs with different densities is attributed to the difference in the gap sizes between SiNWs, specific surface area of SiNWs, and the number of SiNWs in parallel. This work gives the corresponding relationship between the preparation conditions of SiNWs, array density, and output performance of hydrovoltaic devices. Density parameters of SiNW arrays with optimized output performance and corresponding preparation conditions are revealed. The relevant results have important reference value for understanding the mechanism of HDs and designing structural parameters of SiNWs for high-performance hydrovoltaic devices.

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Evaluating the Optical Response of Heavily Decorated Black Silicon Based on a Realistic 3D Modeling Methodology

Cited by 6 publications

References 38 publications

Evaluating the Field Emission Properties of N-Type Black Silicon Cold Cathodes Based on a Three-Dimensional Model

Evaluating the Field Emission Properties of N-Type Black Silicon Cold Cathodes Based on a Three-Dimensional Model

Nanostructured Black Silicon as a Stable and Surface-Sensitive Platform for Time-Resolved In Situ Electrochemical Infrared Absorption Spectroscopy

Modulating the density of silicon nanowire arrays for high-performance hydrovoltaic devices

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