Evaluating Common Electronic Components and GaN HEMTs Under Cryogenic Conditions

Wadsworth, Aaron; Pais, Brandon; Kyle, Shaun; Thrimawithana, Duleepa J.; Badcock, Rodney A.; Lapthorn, Andrew; Heffernan, Bill; Oliver, Rachel A.; Wallis, David; Neuberger, M.

doi:10.1109/spec52827.2021.9709441

Cited by 5 publications

(2 citation statements)

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“…In such a powertrain the temperature of the power electronics would be cryogenic (<−150 • C). At these temperatures silicon-carbide (SiC) FETs [12][13][14] and IGBTs [15,16] tend to have an increase in conduction losses due to a higher R DS(ON) while silicon (Si) FETs [17,18] and gallium nitride (GaN) high electron mobility transistors (HEMTs), [19][20][21][22][23][24] have reduced conduction losses. However, carrier freezeout limits the R DS(ON) reductions of Si devices in comparison to GaN devices.…”

Section: Introductionmentioning

confidence: 99%

“…However, carrier freezeout limits the R DS(ON) reductions of Si devices in comparison to GaN devices. Although unaffected by carrier freezeout, the R DS(ON) reductions of GaN HEMTs at cryogenic temperature are strongly dependent on the technology used to achieve enhancement mode, E-HEMT, behaviour [22][23][24]. The reasons for these changes due to gate behaviour have not yet been explained in commercial power devices which is critical to understand in order to design converters to operate at cryogenic temperature.…”

Section: Introductionmentioning

confidence: 99%

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GaN-based cryogenic temperature power electronics for superconducting motors in cryo-electric aircraft

Wadsworth

Thrimawithana

Zhao

et al. 2023

Supercond. Sci. Technol.

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Climate change has spurred a shift to electric transportation, but aviation faces challenges with electric energy storage and propulsion. Cryogenically cooled superconductingmotors, along with cryogenically cooled power electronics, offer a solution to increase the efficiency and power density of electric aircraft. This paper evaluates the feasibility of cryogenic power electronics by characterizing new technologies (GaN, nanocrystalline) using new experimental techniques. It is found that the on resistance reductions of GaN E-HEMTs at cryogenic temperatures depend on the maximum blocking voltage of the device, and the size of the gate resistor for ohmic p-GaN devices. Different types of nanocrystalline cores are shown to vary greatly in their behavior at cryogenic temperatures, which is measured using a modified core loss measurement circuit. Further analysis shows that the losses of a GaN based cryogenic inverter could potentially halve that of an equivalent Si based inverter

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