Evaluating arbitrary strain configurations and doping in graphene with Raman spectroscopy

Mueller, Niclas S.; Heeg, Sebastian; Peña-Álvarez, Miriam; Kusch, Patryk; Waßerroth, Sören; Clark, Nick; Schedin, F.; Parthenios, John; Papagelis, Konstantinos; Galiotis, Costas; Kalbáč, Martin; Vijayaraghavan, Aravind; Huebner, Uwe; Gorbachev, Roman; Frank, Otakar; Reich, Stéphanie

doi:10.1088/2053-1583/aa90b3

Cited by 105 publications

(156 citation statements)

References 69 publications

Supporting

Mentioning

152

Contrasting

Order By: Relevance

“…The red and blue lines show experimental trajectories for p-type and n-type graphene, respectively [16]. (b, c) The resulting values of hydrostatic strain and doping, respectively, for allowed combinations of G and 2D peak positions according to the Mueller method [18] of strain-doping decomposition. Values above the line of =0 are not treated as valid by the model, and so are left blank.…”

Section: Theorymentioning

confidence: 99%

“…Mueller et al proposed a modification to Lee's method that allows for arbitrary strain configurations to be determined along with doping. [18] Arbitrary strains can be written in terms of the components of a biaxial strain tensor:…”

Section: Theorymentioning

confidence: 99%

“…Raman spectroscopy has proved a useful tool for studying strain and doping in graphene [13,[16][17][18]. Its characteristic Raman peaks (G and 2D) are affected by both strain and doping, which means that the basic Raman analysis does not allow a straightforward separation of intertwined strain and charge effects.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Probing the nanoscale origin of strain and doping in graphene-hBN heterostructures

Vincent¹,

Panchal²,

Booth³

et al. 2018

2D Mater.

View full text Add to dashboard Cite

We use confocal Raman microscopy and modified vector analysis methods to investigate the nanoscale origin of strain and carrier concentration in exfoliated graphene-hexagonal boron nitride (hBN) heterostructures on silicon dioxide (SiO2). Two types of heterostructures are studied: graphene on SiO2 partially coved by hBN, and graphene fully encapsulated between two hBN flakes. We extend the vector analysis methods to produce spatial maps of the strain and doping variation across the heterostructures. This allows us to visualise and directly quantify the much-speculated effect of the environment on carrier concentration as well as strain in graphene. Moreover, we demonstrate that variations in strain and carrier concentration in graphene arise from nanoscale features of the heterostructures such as fractures, folds and bubbles trapped between layers. For bubbles in hBN-encapsulated graphene, hydrostatic strain is shown to be greatest at bubble centres, whereas the maximum of carrier concentration is localised at bubble edges. Raman spectroscopy is shown to be a non-invasive tool for probing strain and doping in graphene, which could prove useful for engineering of two-dimensional devices.

show abstract

Section: Theorymentioning

confidence: 99%

Section: Theorymentioning

confidence: 99%

See 1 more Smart Citation

Probing the nanoscale origin of strain and doping in graphene-hBN heterostructures

Vincent¹,

Panchal²,

Booth³

et al. 2018

2D Mater.

View full text Add to dashboard Cite

show abstract

“…This is valid if we consider that the native strain asymmetry reduces strongly the layer interactions when we measure an asymmetric Raman peak shape under high strain. Further experiments can be done to investigate the low-frequency Raman modes (<50cm -1 ) to carry out to the vibrations and interactions between layers and to conduct systematic polarized measurements 51 . Finally, for nanomechanical applications, the application of a strain of 5% on a suspended 2D nanomembrane is potentially also a rare achievement.…”

Section: Discussionmentioning

confidence: 99%

Nanomechanical Strain Concentration on a Two-Dimensional Nanobridge within a Large Suspended Bilayer Graphene for Molecular Mass Detection

Chaste

Missaoui

Saadani

et al. 2018

ACS Appl. Nano Mater.

View full text Add to dashboard Cite

The recent emergence of strain gradient engineering directly affects the nanomechanics, optoelectronics and thermal transport fields in 2D materials. More specifically, large suspended graphene under very high stress represents the quintessence for nanomechanical mass detection through unique molecular reactions. Different techniques have been used to induce strain in 2D materials, for instance by applying tip indentation, pressure or substrate bending on a graphene membrane. Nevertheless, an efficient way to control the strain of a structure is to engineer the system geometry as shown in everyday life in architecture and acoustics. Similarly, we studied the concentration of strain in artificial nanoconstrictions (~100 nm) in a suspended epitaxial bilayer graphene membrane with different geometries and lengths ranging from 10 to 40 µm. We carefully isolated the strain signature from µ-Raman measurements and extracted information on a scale below the laser spot size by analyzing the broadened shape of our Raman peaks, up to 100 cm -1 . We potentially measured a strong strain concentration in a nanoconstriction up to 5%, which is 20 times larger than the native epitaxial graphene strain. Moreover, with a bilayer graphene, our configuration naturally enhanced the native asymmetric strain between the upper and lower graphene layers. In contrast to previous results, we can achieve any kind of complex strain tensor in graphene thanks to our structural approach. This method completes the previous strain-induced techniques and opens up new perspectives for bilayer graphene and 2D heterostructures based devices.

show abstract

“…In optical domain of strained graphene, most of investigations focused on Raman scatterings [3][4][5][6][7][8][9][10][11][12][13][14][15][16]. A few reports indicated that the optical absorption response of graphene can be modified by strain [17][18][19][20][21].…”

Section: Introductionmentioning

confidence: 99%

Enhancement of ultrafast photoluminescence from deformed graphene studied by optical localization microscopy

et al. 2020

View full text Add to dashboard Cite

By using localization techniques, we demonstrated that the morphology of a 2D material in three dimensions can be optically obtained with nanometer precision in z-axis. This technique provides a convenient method to study the correlation between the optical properties and the morphology of 2D materials for the same area. We utilized optical localization microscopy to directly study the correlation between the ultrafast photoluminescence and the morphology of graphene. We observed enhancement of the ultrafast photoluminescence from the deformed graphene. In comparison to the planar graphene, the enhancement factor of ultrafast photoluminescence could be up to several times at the highly curved region. We found that the intensity of photoluminescence from the uniaxially rippled graphene depends on the polarization of excitation light. Furthermore, Raman spectroscopy was used to measure the strain distribution. Pump-probe measurements were conducted to reveal the carrier dynamics. From the experimental results, two mechanisms were confirmed to mainly account for the enhancement of ultrafast photoluminescence from the deformed graphene. One is the deformation-induced strain increases the absorption of graphene. The other is the prolonged carrier relaxation time in the curved graphene.

show abstract

Evaluating arbitrary strain configurations and doping in graphene with Raman spectroscopy

Cited by 105 publications

References 69 publications

Probing the nanoscale origin of strain and doping in graphene-hBN heterostructures

Probing the nanoscale origin of strain and doping in graphene-hBN heterostructures

Nanomechanical Strain Concentration on a Two-Dimensional Nanobridge within a Large Suspended Bilayer Graphene for Molecular Mass Detection

Enhancement of ultrafast photoluminescence from deformed graphene studied by optical localization microscopy

Contact Info

Product

Resources

About