Evaluate breaking strength of thin silicon die by ball-on-ring microforce tests and finite element analysis

Liu, De‐Shin; Chen, Zi-Hau; Lee, Chun-Lin

doi:10.1109/impact.2011.6117265

Cited by 5 publications

(2 citation statements)

References 3 publications

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“…As noted before, the strain is linearly proportional to the applied pressure; for each 1 bar of pressure rise, the strain rises by 12.09 × 10 −5 . The pressure can be increased further till 5 bar, assuming the breaking stress, for silicon, of 1 GPA [11]. The resulting strain in device 3, at a 5 bar pressure difference, will be 9.106 × 10 −4 , which will result in additional frequency tuning of 35 MHz.…”

Section: Resultsmentioning

confidence: 99%

Strain engineering of graphene nano-resonator

More¹,

Naik²

2021

J. Micromech. Microeng.

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Nano-resonators are increasingly used to study fundamental phenomena in dynamical systems. Strain tuning of resonance frequency provides an additional control knob in experiments that use these devices. In this work, we present a simple technique to tune the strain in these nano-resonators by controllably deforming a small section of the silicon substrate. We fabricate the graphene nano-resonators on a thinned circular region on the Si/SiO2 substrate. This circular diaphragm can be easily deformed by creating a pressure difference across it. We achieve this using a simple printed circuit board and KF-flange assembly. With this setup, we can produce a strain change of 12 × 10−5 on the device, with 1 bar pressure difference. This strain is enough to observe a corresponding frequency shift of 9 MHz. The proposed method to produce strain in the nano-resonators is free from any fabrication constraints and can be utilized for a wide variety of nano-resonators.

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Section: Resultsmentioning

confidence: 99%

Strain engineering of graphene nano-resonator

More¹,

Naik²

2021

J. Micromech. Microeng.

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“…According to Schoenfelder et al [96], biaxial bending is much more sensitive to large deflection than uniaxial bending, and that (6) and (8) are valid if the deflection does not exceed h/2. Jeon et al [106], Liu et al [107], Wasmer et al [108], and Barredo et al [109] have used FEA to verify the validity of analytical calculations for biaxial bend experiments with large deflection. In ball-on-ring tests, Jeon et al [106] found that the analytical solution for die strength correlates well with FEA solution for die thicknesses between 22 and 31 μm.…”

Section: Mechanical Strengthmentioning

confidence: 99%

Characterization Methods for Ultrathin Wafer and Die Quality: A Review

Marks

Hassan

Cheong

2014

IEEE Trans. Compon., Packag. Manufact. Technol.

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Ultrathin silicon die is a key enabler for highperformance semiconductor devices and ultrathin packaging. The quality of ultrathin wafers and dies has a significant influence on packaging assembly yield and device reliability.The key quality characteristics of ultrathin wafers and dies are bow/warpage, total thickness variation (TTV), subsurface damage (SSD), surface roughness, and mechanical strength. Wafer and die bow/warpage cause handling and processing problems in manufacturing processes, and induce defects during various packaging assembly processes that eventually lead to device reliability issues. The wafer TTV requirement is becoming more stringent for new generations of thin and 3-D packages. SSD, surface roughness, and dicing defects have adverse effects on die mechanical strength and reliability. Therefore, characterization methods are needed for these quality characteristics to control the manufacturing processes for ultrathin wafers and dies to ensure good device performance and reliability. The following ultrathin wafer and die characterization techniques are discussed in this paper: noncontact bow/warp/TTV measurement, materialographic analysis with optical and electron microscopy, high-resolution X-ray diffraction, micro-Raman spectroscopy, scanning infrared depolarization, optical profilometry, atomic force microscopy, and uniaxial/biaxial bending tests.Index Terms-Bow, die mechanical strength, subsurface damage (SSD), surface roughness, total thickness variation (TTV), ultrathin die, ultrathin wafer, warpage.

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