EUV Resist Materials for 16 nm And below Half Pitch Applications

Tarutani, Shinji; Tsubaki, Hideaki; Takizawa, Hiroo; Goto, Takahiro

doi:10.2494/photopolymer.25.597

Cited by 10 publications

(8 citation statements)

References 13 publications

(13 reference statements)

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“…The deprotection of partially protected polymers has been used to change the polarity of resist polymers. [2][3][4] High sensitivity is obtained through the enhancement of chemical reactions via a chain-reaction mechanism. An acid molecule generated upon exposure to radiation, such as extreme ultraviolet (EUV) radiation, diffuses in the resist matrix and occasionally induces the deprotection of the polymer when it happens to encounter a protected unit.…”

Section: Introductionmentioning

confidence: 99%

Relationship between Defects and Stochastic Effect in Chemically Amplified Resists Used for Extreme Ultraviolet Lithography

Kozawa

Santillan

Itani

2013

Jpn. J. Appl. Phys.

125

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With the approach of the realization of extreme ultraviolet (EUV) lithography, practical issues such as the defects of resist patterns have attracted attention. In this study, the defects of line-and-space resist patterns were investigated from the viewpoint of the stochastic effects of chemical reactions. The stochastic effect was expressed using the standard deviation σ of the protected-unit concentration. To eliminate bridges within a 6.8 µm length in the line direction, a 1.5–2.0σ difference is required between the average protected-unit concentration and the dissolution point at the center of the space. To eliminate line breaks and severe pinching within a 6.1 µm length in the line direction, a 1.2–1.6σ difference is required between the average protected-unit concentration and the dissolution point at the center of the resist line pattern.

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Section: Introductionmentioning

confidence: 99%

Relationship between Defects and Stochastic Effect in Chemically Amplified Resists Used for Extreme Ultraviolet Lithography

Kozawa

Santillan

Itani

2013

Jpn. J. Appl. Phys.

125

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“…Accordingly, they synthesized a series of polymers in which their hydrophobicity was changed by utilizing polymers having a different chemical structure and protection ratio. The polymer with the higher hydrophobicity can resolve 16 nm hp line/spacer using an EUV tool [47]. In another work of the same group, CARs with different sensitivities were synthesized in order to examine the impact of sensitivity on 15 nm hp resolution.…”

Section: Polymeric Systems Based On Hydrophilicity Changementioning

confidence: 99%

High Sensitivity Resists for EUV Lithography: A Review of Material Design Strategies and Performance Results

Manouras

Argitis

2020

Nanomaterials

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The need for decreasing semiconductor device critical dimensions at feature sizes below the 20 nm resolution limit has led the semiconductor industry to adopt extreme ultra violet (EUV) lithography with exposure at 13.5 nm as the main next generation lithographic technology. The broad consensus on this direction has triggered a dramatic increase of interest on resist materials of high sensitivity especially designed for use in the EUV spectral region in order to meet the strict requirements needed for overcoming the source brightness issues and securing the cost efficiency of the technology. To this direction both fundamental studies on the radiation induced chemistry in this spectral area and a plethora of new ideas targeting at the design of new highly sensitive and top performing resists have been proposed. Besides the traditional areas of acid-catalyzed chemically amplified resists and the resists based on polymer backbone breaking new unconventional ideas have been proposed based on the insertion of metal compounds or compounds of other highly absorbing at EUV atoms in the resist formulations. These last developments are reviewed here. Since the effort targets to a new understanding of electron-induced chemical reactions that dominate the resist performance in this region these last developments may lead to unprecedented changes in lithographic technology but can also strongly affect other scientific areas where electron-induced chemistry plays a critical role.

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“…Using the absorbed energy, an acid image is formed. By heating the samples, a latent image is formed through the acid catalytic chain reaction (generally, the deprotection of partially protected polymers [2][3][4] ). By developing the chemical latent image, a resist pattern is obtained.…”

Section: Introductionmentioning

confidence: 99%

Stochastic effects in 11 nm imaging of extreme ultraviolet lithography with chemically amplified resists

Kozawa

Santillan

Itani

2014

Jpn. J. Appl. Phys.

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The resolution of extreme ultraviolet (EUV) lithography with chemically amplified resist processes has reached 16 nm (half-pitch). The development of chemically amplified resists is ongoing toward the 11 nm node. However, the stochastic effects are increasingly becoming a significant concern with the continuing shrinkage of features. In this study, the fluctuation of protected unit distribution caused by the stochastic effects during image formation was investigated assuming line-and-space patterns with 11 nm half-pitch. Contrary to expectations, the standard deviation of the number of protected units connected to a polymer after postexposure baking (PEB) did not differ from that for 16 nm half-pitch. The standard deviation after PEB increased with the effective reaction radius for deprotection and the initial standard deviation before PEB. Because of the severe requirements for resist processes, the stochastic effects in chemical reactions should be taken into account in the design of next-generation resists.

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EUV Resist Materials for 16 nm And below Half Pitch Applications

Cited by 10 publications

References 13 publications

Relationship between Defects and Stochastic Effect in Chemically Amplified Resists Used for Extreme Ultraviolet Lithography

Relationship between Defects and Stochastic Effect in Chemically Amplified Resists Used for Extreme Ultraviolet Lithography

High Sensitivity Resists for EUV Lithography: A Review of Material Design Strategies and Performance Results

Stochastic effects in 11 nm imaging of extreme ultraviolet lithography with chemically amplified resists

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