EUV mask inspection with 193 nm inspector for 32 and 22 nm HP

Wack, Daniel; Zhang, Qiang Q.; Inderhees, Gregg; Lopez, Dan

doi:10.1117/12.864093

Cited by 4 publications

(3 citation statements)

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“…So called "Phase defect" will exist in multi layer, and will be printed on wafer with even very small height, less than 2nm, on the surface. Inspection tool vendors have been trying to capture the defect with optical source tool and EB tool [2,4,5,6]. However, we think that we need actinic, with EUV light source, blank defect inspection tool to capture the "Phase defect" at the stage of EUV mask blank manufacturing.…”

Section: -2 Defect Inspection Methods and Evaluation Resultsmentioning

confidence: 99%

NGL masks: development status and issue

Hayashi

Abe

Shimomura³

et al. 2011

27th European Mask and Lithography Conference

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Section: -2 Defect Inspection Methods and Evaluation Resultsmentioning

confidence: 99%

NGL masks: development status and issue

Hayashi

Abe

Shimomura³

et al. 2011

27th European Mask and Lithography Conference

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“…OPI already has capability of inspecting 32nm HP pattern of EUV mask. Moreover, there is no big doubt that OPI of 19x nm wavelength will meet the requirement of 22 nm HP pattern EUV mask inspection employing polarized illumination and off-axis illumination technology [5,6,7]. Optimization of film structure of EUV mask may also help to boost sensitivity [7].…”

Section: Introductionmentioning

confidence: 99%

Native pattern defect inspection of EUV mask using advanced electron beam inspection system

Shimomura¹,

Inazuki

Abe

et al. 2010

SPIE Proceedings

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Fabrication of defect free EUV mask is one of the most critical roadblocks for implementing EUV lithography into semiconductor high volume manufacturing for 22nm half-pitch (HP) node and beyond. At the same time, development of quality assurance process for the defect free EUV mask is also another critical challenge we need to address before the mass production. Inspection tools act important role in quality assurance process to ensure the defect free EUV mask. We are currently evaluating two types of inspection system: optical inspection (OPI) system and electron beam inspection (EBI) system [1, 2]. While OPI system is sophisticated technology and has an advantage in throughput, EBI system is superior in sensitivity and extendability to even small pattern.We evaluated sensitivity of EBI system and found it could detect 25 nm defects on 88nm L/S pattern which is as small as target defect size for 23 nm Flash HP pattern in 2013 in 2009 ITRS lithography roadmap [2, 3]. EBI system is effective inspection tool even at this moment to detect such small defects on 88nm HP pattern, though there are still some challenges such as the slow throughput and the reliability. Therefore, EBI system can be used as bridge tool to compensate insufficient sensitivity of current inspection tools and improve EUV mask fabrication process to achieve the defect free EUV mask. In this paper, we will present the results of native pattern defects founded on large field 88nm HP pattern using advance EBI system. We will also classify those defects and propose some ideas to mitigate them and realize the defect free EUV mask, demonstrating the capability of EBI as bridge tool.

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“…For 2Xnm EUV mask, defect specification target can be achieved by applying special illumination shape and polarization illumination with the current 19Xnm optical mask inspection system and throughput will be acceptable. Current status is under development and will be available soon [2] [3]. For 1Xnm EUV mask, it will be difficult for the current 19Xnm optical mask inspection system to meet defect specification.…”

Section: Introductionmentioning

confidence: 99%

Development of EB inspection system EBeyeM for EUV mask

et al. 2010

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We are developing new electron beam inspection system, named EBeyeM, which features high speed and high resolution inspection for EUV mask. Because EBeyeM has the projection electron microscope technique, the scan time of EBeyeM is much faster than that of conventional SEM inspection system.We developed prototype of EBeyeM. The aim of prototype system is to prove the concept of EBeyeM and to estimate the specification of system for 2Xnm and 1Xnm EUV mask.In this paper, we describe outline of EBeyeM and performance results of the prototype system. This system has two inspection mode. One is particle inspection and the other is pattern defect inspection. As to the sensitivity of EBeyeM prototype system, the development target is 30nm for the particle inspection mode and 50nm for pattern defect inspection mode. The performance of this system was evaluated. We confirmed the particle inspection mode of the prototype system could detect 30nm PSL(Polystyrene Latex) and the sensitivity was much higher than conventional optical blank inspection system. And we confirmed that the pattern defect sensitivity of the prototype system was around 45nm. It was recognized that both particle inspection mode and pattern defect inspection mode met the development target. It was estimated by the performance results of the prototype system that the specification of EBeyeM would be able to achieve for 2Xnm EUV mask. As to 1Xnm EUV mask, we are considering tool concept to meet the specification.

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EUV mask inspection with 193 nm inspector for 32 and 22 nm HP

Cited by 4 publications

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NGL masks: development status and issue

NGL masks: development status and issue

Native pattern defect inspection of EUV mask using advanced electron beam inspection system

Development of EB inspection system EBeyeM for EUV mask

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