EUV industrialization high volume manufacturing with NXE3400B

Mastenbroek, Marcel

doi:10.1117/12.2502785

Cited by 8 publications

(6 citation statements)

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“…The oxygen diffusivity in the Ru thin film according to temperature is expressed by Equation ( 2) of an Arrhenius form. 𝐷 = 𝐷 0 𝑒 − 𝐸 𝑎 𝑘𝑇 (2) where 𝐷 0 is the pre-exponential factor, 𝐸 𝑎 is the activation energy, 𝑘 is the Boltzmann constant, and 𝑇 is the temperature of the reaction system. According to Equation (2), the oxygen diffusivities of the ideal Ru thin film were 1.9 × 10 −25 and 1.6 × 10 −14 m 2 /s at 25 °C and 450 °C, respectively.…”

Section: Resultsmentioning

confidence: 99%

Investigating the Degradation of EUV Transmittance of an EUV Pellicle Membrane

Jang

Lee

et al. 2022

Membranes

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The extreme ultraviolet (EUV) pellicle is a freestanding membrane that protects EUV masks from particle contamination during EUV exposure. Although a high EUV transmittance of the pellicle is required to minimize the loss of throughput, the degradation of EUV transmittance during the extended exposure of the pellicle has been recently reported. This may adversely affect the throughput of the lithography process. However, the cause of this phenomenon has not yet been clarified. Therefore, we investigated the cause of the degradation in the EUV transmittance by observing the compositional change when the Ru/SiNx pellicle composite was heated in an emulated EUV scanner environment. The Ru thin film that was deposited at high pressure had more void networks but was not oxidized, whereas the SiNx thin film was oxidized after heating. This was because the void network in the Ru thin film served as a preferential diffusion path for oxygen and caused oxidation of the SiNx thin film. It was confirmed that the degradation of the EUV transmittance was due to the oxidation of SiNx. The results verified the effect of diffusivity in the thin film due to the void network on oxidation and EUV transmittance.

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Section: Resultsmentioning

confidence: 99%

Investigating the Degradation of EUV Transmittance of an EUV Pellicle Membrane

Jang

Lee

et al. 2022

Membranes

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“…The basic configuration of an EUV exposure device is shown in Fig. 20 (Mastenbroek 2018). This has almost the same layout as a DUV system, although it operates under vacuum.…”

Section: Features Of Euvlmentioning

confidence: 99%

“…The specifications for an NXE:3400B scanner are summarized in Fig. 23 (Mastenbroek 2018). They satisfy the requirements of an NA value of 0.33.…”

Section: Features Of Euvlmentioning

confidence: 99%

Advances in Optics and Exposure Devices Employed in Excimer Laser/EUV Lithography

Suzuki¹

2020

Handbook of Laser Micro- And Nano-Engineering

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Semiconductor lithography currently provides a resolution close to 10 nm, with the aim of producing extremely fine patterning. Over the last decade, lithography techniques have progressed from ArF immersion to multiple patterning to extreme ultraviolet lithography (EUVL) operating at a wavelength of 13.5 nm. During this period, the first-generation lithography devices were immersion systems and achieved 40 nm resolution through a 1.35 numerical aperture (NA) projection lens in conjunction with an ArF laser (operating at 193 nm) and water immersion. To make full use of the capability of the projection lens, A. Suzuki (*) Head quarter, AS Lithography Consulting

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“…Extreme ultraviolet (EUV) lithography has been applied to the high-volume manufacturing (HVM) of semiconductor logic devices and dynamic random-access memory (DRAM) at 7-nm technology nodes and beyond [1,2]. The EUV pellicle is a free-standing membrane that protects the EUV mask from the external defects generated during the exposure process, thus improving the yield of the EUV lithography process [3,4].…”

Section: Introductionmentioning

confidence: 99%

Investigation of the Resistivity and Emissivity of a Pellicle Membrane for EUV Lithography

Jang

Kim

et al. 2022

Membranes

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A pellicle is a thin membrane structure that protects an extreme ultraviolet (EUV) mask from contamination during the exposure process. However, its limited transmittance induces unwanted heating owing to the absorption of EUV photons. The rupture of the EUV pellicle can be avoided by improving its thermal stability, which is achieved by improving the emissivity of the film. However, the emissivity data for thin films are not easily available in the literature, and its value is very sensitive to thickness. Therefore, we investigated the dependence of emissivity on structural parameters, such as thickness, surface roughness, and grain size. We found a correlation between resistivity and emissivity using theoretical and experimental approaches. By changing the grain size of the Ru thin film, the relationship between resistivity and emissivity was experimentally verified and confirmed using the Lorentz–Drude model. Finally, we present a method to develop an EUV pellicle with better thermal stability that can withstand high-power EUV light sources.

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EUV industrialization high volume manufacturing with NXE3400B

Cited by 8 publications

References 0 publications

Investigating the Degradation of EUV Transmittance of an EUV Pellicle Membrane

Investigating the Degradation of EUV Transmittance of an EUV Pellicle Membrane

Advances in Optics and Exposure Devices Employed in Excimer Laser/EUV Lithography

Investigation of the Resistivity and Emissivity of a Pellicle Membrane for EUV Lithography

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