Proceedings of the 52nd Annual Design Automation Conference 2015
DOI: 10.1145/2744769.2747925
|View full text |Cite
|
Sign up to set email alerts
|

EUV and e-beam manufacturability

Abstract: As process nodes continue to shrink, the semiconductor industry faces severe manufacturing challenges. Two most expected technologies may push the limits of next-generation lithography: extreme ultraviolet lithography (EUVL) and electron beam lithography (EBL). EUVL works by emitting intense beams of ultraviolet light that are reflected from a reflective mask into a resist for nanofabrication, while EBL scans focused beams of electrons to directly draw high-resolution feature patterns on a resist without emplo… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

0
2
0

Year Published

2018
2018
2023
2023

Publication Types

Select...
3
3

Relationship

0
6

Authors

Journals

citations
Cited by 13 publications
(2 citation statements)
references
References 32 publications
0
2
0
Order By: Relevance
“…With the shift to extreme ultraviolet (EUV) lithography [59] and gate-all-around FETs [60], the "minimax problem" of maximizing chip yields, minimizing manufacturing costs, and maximizing chip performance has grown increasingly complex. Chiplets [61,62] have emerged as a way to address these issues, while also integrating multiple functions in a single package.…”
Section: Semiconductor Shiftsmentioning
confidence: 99%
“…With the shift to extreme ultraviolet (EUV) lithography [59] and gate-all-around FETs [60], the "minimax problem" of maximizing chip yields, minimizing manufacturing costs, and maximizing chip performance has grown increasingly complex. Chiplets [61,62] have emerged as a way to address these issues, while also integrating multiple functions in a single package.…”
Section: Semiconductor Shiftsmentioning
confidence: 99%
“…[ 15 ] However, conventional UV lithography shows its limit down to 1 µm scale structures, while expensive and time‐consuming processes like extreme UV (EUV) or electron beam lithography (EBL) are needed to achieve structures within the nanometer range. [ 16 ] Bottom‐up methods show high yield for producing nanoscale structures with low cost. However, the structural repeatability and facile process of device integration still need to be improved.…”
Section: Introductionmentioning
confidence: 99%