EUV (13.5-nm) light generation using a dense plasma focus device

Partlo, William N.; Fomenkov, Igor V.; Birx, D.L.

doi:10.1117/12.351080

Cited by 11 publications

(15 citation statements)

References 11 publications

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“…Different concepts are reported in the literature, where topics relevant for EUVL like spectral emission characteristic, conversion efficiency, source size, repetitive operation, pulse to pulse stability or lifetime are considered. These concepts are for example the capillary discharge [2,3], the gas puff z-pinch [4] or the dense plasma focus [ 5 ] . There are already promising results concerning few demands but there is still work to be done for the hlfilment of all requirements given by EUV-lithography.…”

Section: Introductionmentioning

confidence: 99%

An extreme ultraviolet radiation source based on a gas discharge plasma

Bergmann

Schriever²,

Rosier³

et al. 1999

Digest of Technical Papers. 12th IEEE International Pulsed Power Conference. (Cat. No.99CH36358)

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An extreme ultraviolet radiation source that emits in the spectral range around 13 nm wavelength or 100 eV photon energy is discussed. The source is based on a small pinch plasma which is generated in a fast discharge of electrically stored energy in the range of 1 Joule. Theoretical considerations are presented which show that this energy is close to the minimal required energy for a dynamic pinch plasma which effectively emits radiation in the spectral range of interest. Here, the constraints given by the gas discharge apparatus have to be taken into account. These constraints refer to, e.g., the length of the plasma column or the achievable compression or number density.

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Section: Introductionmentioning

confidence: 99%

An extreme ultraviolet radiation source based on a gas discharge plasma

Bergmann

Schriever²,

Rosier³

et al. 1999

Digest of Technical Papers. 12th IEEE International Pulsed Power Conference. (Cat. No.99CH36358)

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show abstract

“…Ever since Klosner and Silfvast's pioneering experimental evidence on the 13.5 nm EUV source based on xenon-filled capillary discharge plasma, 5) much progress has been seen in DPP studies. [6][7][8][9] Most of these studies are mainly focused on how to increase the EUV power and the source efficiency experimentally as well as theoretically. It is now well documented that a very narrow high-temperature highdensity xenon plasma column inside a capillary acts as an active medium for the emission of a copious amount of EUV radiation at around 13.5 nm, and this active medium can be realized by generating high-current discharge across the capillary.…”

Section: Introductionmentioning

confidence: 99%

Characteristics of Xenon Capillary Z-Pinch Extreme Ultraviolet Lithography Source Driven by Different dI/dt Discharge Current Pulses

Song¹,

Iwata²,

Homma³

et al. 2005

Jpn. J. Appl. Phys.

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Next-generation lithography will require an extreme-ultraviolet (EUV) light source that ensures high radiation intensities at a wavelength of around 13.5 nm. The characteristics of pinch dynamics and emission in this spectral range were studied experimentally for xenon capillary Z-pinch plasma driven by different dI=dt discharge current pulses. The pinch dynamics of the capillary Z-pinch plasma were examined by employing a high-speed camera, and the spectral emission from plasma was inspected using an EUV photodiode, a mini calorimeter and spectrometers. Our results confirm that high-dI=dt discharge current has better performance in comparison with the low one in terms of plasma dynamics, EUV power output and debris generation.

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“…Such a source as well as the EUVL tool has to fulfil extremely high demands, both technical and cost oriented. The light production mechanism changes from conventional lamps and lasers to relatively high temperature emitting plasmas [1][2][3][4][5][6][7]. While there are different methods to generate EUV radiation, such as synchrotrons, free electron lasers, laser produced plasmas (LPP) and discharge produced plasmas (DPP), only the latter two prove to be economically viable solutions for EUVL.…”

Section: Introductionmentioning

confidence: 99%

Plasma sources for EUV lithography exposure tools

Banine¹,

Moors²

2004

J. Phys. D: Appl. Phys.

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The source is an integral part of an extreme ultraviolet lithography (EUVL) tool. Such a source, as well as the EUVL tool, has to fulfil extremely high demands both technical and cost oriented. The EUVL tool operates at a wavelength in the range 13–14 nm, which requires a major re-thinking of state-of-the-art lithography systems operating in the DUV range. The light production mechanism changes from conventional lamps and lasers to relatively high temperature emitting plasmas. The light transport, mainly refractive for DUV, should become reflective for EUV. The source specifications are derived from the customer requirements for the complete tool, which are: throughput, cost of ownership (CoO) and imaging quality. The EUVL system is considered as a follow up of the existing DUV based lithography technology and, while improving the feature resolution, it has to maintain high wafer throughput performance, which is driven by the overall CoO picture. This in turn puts quite high requirements on the collectable in-band power produced by an EUV source. Increased, due to improved feature resolution, critical dimension (CD) control requirements, together with reflective optics restrictions, necessitate pulse-to-pulse repeatability, spatial stability control and repetition rates, which are substantially better than those of current optical systems. All together the following aspects of the source specification will be addressed: the operating wavelength, the EUV power, the hot spot size, the collectable angle, the repetition rate, the pulse-to-pulse repeatability and the debris induced lifetime of components.

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EUV (13.5-nm) light generation using a dense plasma focus device

Cited by 11 publications

References 11 publications

An extreme ultraviolet radiation source based on a gas discharge plasma

An extreme ultraviolet radiation source based on a gas discharge plasma

Characteristics of Xenon Capillary Z-Pinch Extreme Ultraviolet Lithography Source Driven by Different dI/dt Discharge Current Pulses

Plasma sources for EUV lithography exposure tools

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