Eutectic formation in chromium-doped indium phosphide

Straughan, B.W.; Hurle, D.T.J.; Lloyd, K.; Mullin, J. B.

doi:10.1016/0022-0248(74)90159-6

Cited by 25 publications

(3 citation statements)

References 10 publications

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“…The first SI InP reported was a Cr-doped material analogous to GaAs [32]. However, the chromium Cr 3+/ 2+ acceptor level is located in the upper part of the energy gap in InP (see Fig.…”

Section: Tm-doped Si Inp Crystalsmentioning

confidence: 99%

Semi-Insulating Transition Metal-Doped III-V Materials

Hennel

1991

Acta Phys. Pol. A

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“…The first SI InP reported was a Cr-doped material analogous to GaAs [32]. However, the chromium Cr 3+/ 2+ acceptor level is located in the upper part of the energy gap in InP (see Fig.…”

Section: Tm-doped Si Inp Crystalsmentioning

confidence: 99%

Semi-Insulating Transition Metal-Doped III-V Materials

Hennel

1991

Acta Phys. Pol. A

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“…Transition metal (TM) acceptors, such as Cr [5] and Co [6] were also used to compensate the residual shallow donors in InP but their respective levels are located 0.4 eV below the conduction band and 0.3 eV above the valence band, and this makes it impossible to achieve resistivity higher than 10 5 Ωcm. SI InP obtained with Ti doping has previously been grown [7].…”

Section: Introductionmentioning

confidence: 99%

Particle detectors based on semiconducting InP epitaxial layers

Yatskiv¹,

Grym²,

Žďánský

2011

J. Inst.

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A study of electrical properties and detection performance of two types of Indium Phosphide detector structures was performed: (i) with p-n-junction and (ii) with Schottky contact prepared on high purity p-type InP. The p-n junction detectors were based on a high purity InP:Pr layers of both n-and p-type conductivity with carrier concentration on the order of 10 14 cm −3 grown on Sn doped n-type substrate. Schottky barrier detectors were prepared by vacuum evaporation of Pd on high purity p-type epitaxial layer grown on Mn doped p-type substrate. The detection performance of particle detectors was measured by pulse-height spectra with alpha particles emitted from 241 Am source at room temperature.

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“…Up till now, SI InP could only be obtained via doping by transition metal (TM) impurities such as Fe, Co, Cr and Mn [1][2][3] which act as deep acceptors and by co-doping by Ti and Zn, which act as a deep donor and a shallow acceptor, respectively. However, conventional TMdoped InP has various disadvantages.…”

mentioning

confidence: 99%

High temperature annealing of undoped and Mn doped InP: photoluminescence and Hall measurements

Zavadil

Žďánský

Pekárek

et al. 2003

phys. stat. sol. (c)

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PACS 72.80. Ey, 78.55.Cr Crystals of intentionally undoped n-type InP and Mn doped p-type InP were grown by the Czochralski technique. The as-grown crystals and those processed by high temperature long time annealing were studied by low temperature photoluminescence and temperature dependent Hall measurements. A new broad band was observed in those undoped InP samples which were converted to semi-insulating state by annealing. Hall measurements on those samples show that the semi-insulating state is caused by deep level defects of the same energy as the binding energy of the Fe impurity. Another new photoluminescence band appeared in the annealed InP doped with Mn, while the concentration of Mn did not change according to both photoluminescence and Hall measurements.Introduction Semi-insulating (SI) InP is a very important material for high-frequency devices and for applications in optoelectronics. Up till now, SI InP could only be obtained via doping by transition metal (TM) impurities such as Fe, Co, Cr and Mn [1-3] which act as deep acceptors and by co-doping by Ti and Zn, which act as a deep donor and a shallow acceptor, respectively. However, conventional TMdoped InP has various disadvantages. It is preferable to avoid TM doping since it is possible that these impurities may deteriorate device performance [4]. Undoped SI InP, which can be realised by hightemperature annealing, is a candidate for replacing conventional TM-doped InP by a material of better quality. There are several reports in the literature on the realisation of nominally undoped SI InP [5 -7] with promising results but it is not clear if deep defects were created as in the case of undoped SI GaAs. To understand the mechanism of the conversion (due to annealing), we have measured samples of undoped InP after annealing, by temperature dependent Hall measurements and by low-temperature photoluminescence (PL). Further, we have measured the effect of annealing on p-type Mn doped InP.

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Eutectic formation in chromium-doped indium phosphide

Cited by 25 publications

References 10 publications

Semi-Insulating Transition Metal-Doped III-V Materials

Semi-Insulating Transition Metal-Doped III-V Materials

Particle detectors based on semiconducting InP epitaxial layers

High temperature annealing of undoped and Mn doped InP: photoluminescence and Hall measurements

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