Europium-Doped Gallium Nitride Prepared by Na Flux Method

Yamada, Takahiro; Nanbu, Hiroshi; Yamane, Hisanori; Kohiro, K.; Tsuchida, Yoshiaki

doi:10.1143/jjap.45.l194

Cited by 9 publications

(6 citation statements)

References 20 publications

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“…Recently, RE doped GaN nano powders have been prepared using different methods including flux techniques and combustion synthesis [11][12][13][14][15][16]. Wu et al [12,13] reported green and red emissions from Er and Eu doped GaN powders, respectively.…”

Section: Introductionmentioning

confidence: 99%

Magnetic cages of GaN nanoclusters doped with Gd and Nd

Kumar

Zavada

2010

SPIE Proceedings

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We report results of ab initio calculations on (GaN) n nanoclusters with n = 12, 16, 22, and 24 using generalized gradient approximation (GGA) for the exchange-correlation energy. We find cage structures of GaN clusters to be lower in energy as compared to bulk fragments which have been fully optimized. Selected cages have been doped with Gd and Nd atoms by substituting Gd and Nd on Ga sites, respectively. The atomic structures of such doped nanoclusters have been optimized using spin-polarized GGA and by including all f electrons on the rare earth atoms. We find the doped nanoclusters to be magnetic with 7 μ B (3 μ B ) magnetic moments when 1 Gd (Nd) atom is doped. When 2 Gd (Nd) atoms are substituted on different Ga sites, there is often a ferromagnetic coupling between the rare earth atoms, but we also find zero net magnetic moment in the nanocluster depending upon the separation between the doped atoms suggesting that both ferromagnetic and antiferromagnetic couplings may occur between the rare earth dopants.

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Section: Introductionmentioning

confidence: 99%

Magnetic cages of GaN nanoclusters doped with Gd and Nd

Kumar

Zavada

2010

SPIE Proceedings

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“…4,5 The luminescence performance has been studied for thin film GaN, 1 amorphous GaN, 6 bulk crystalline GaN, 7 and GaN quantum dots. 8 Lanthanide ion implantation profiles, 9 local symmetry around lanthanide ions, 2,4 energy transfer from GaN to the lanthanide, 4,10 and annealing treatments 11 have all been subject of study with the aim to improve luminescence performance.…”

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confidence: 99%

Location of lanthanide impurity levels in the III-V semiconductor GaN

Dorenbos

Kolk

2006

Applied Physics Letters

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Knowledge from lanthanide spectroscopy on wide band gap ͑6-10 eV͒ inorganic compounds is used to understand and predict optical and electronic properties of the lanthanides in the III-V semiconductor GaN. For the first time the location of the 4f n ground state energy of each divalent and trivalent lanthanide ion relative to the valence and conduction bands in GaN is presented. The authors will demonstrate that the quantum efficiency of luminescence from Pr 3+ , Eu 3+ , Tb 3+ , and Yb 3+ depends on the location of the lanthanide levels. Level location also controls electron acceptor and electron donor properties of lanthanide ions.

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“…Representative peaks attributable to Eu 3 þ were confirmed. The CL and photoluminescence (PL) properties of non-doped and Eu-doped h-GaN synthesized by the Na flux method have been studied by Yamada et.al [28], who have shown that the strong main peak at 624 nm originated from 5 D 0 -7 F 2 . Two phenomena, (1) a main peak of 611 nm that was also attributable to 5 D 0 -7 F 2 was slightly different from the result reported by Yamada et.al and (2) the peak attributable to 5 D 1 -7 F 0 , were thought to reflect the feature of a low Eu doping concentration.…”

Section: Resultsmentioning

confidence: 99%