2010
DOI: 10.1016/j.physc.2010.07.005
|View full text |Cite
|
Sign up to set email alerts
|

European roadmap on superconductive electronics – status and perspectives

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

1
85
0
2

Year Published

2012
2012
2023
2023

Publication Types

Select...
5
3
1

Relationship

1
8

Authors

Journals

citations
Cited by 140 publications
(88 citation statements)
references
References 185 publications
1
85
0
2
Order By: Relevance
“…A RF power of 6.4 W/in. 2 was used in order to obtain a low deposition rate and improve the control and quality of the insulating barrier. The chamber pressure before deposition was a)…”
mentioning
confidence: 99%
“…A RF power of 6.4 W/in. 2 was used in order to obtain a low deposition rate and improve the control and quality of the insulating barrier. The chamber pressure before deposition was a)…”
mentioning
confidence: 99%
“…The 1/R dependence of F mv will be modified if we account for the Meissner currents induced in the SC thin film by the stray fields, H s . Within the London approximation, the analytical formula for the force on the vortex in the gap region is [9]: (2) where dq , λ eff =λ 2 /d and dt , and dt are cosine and sine integrals.…”
Section: A Transverse Polarization Of Py Stripesmentioning
confidence: 99%
“…Development of new low power micro-circuitry is a crucial requirement for future digital information technologies [1][2][3][4][5][6]. Superconducting materials capable of transferring electric signals without dissipation provide a potential solution towards this goal.…”
Section: Introductionmentioning
confidence: 99%
“…The second is aimed for the application of single flux quantum (SFQ) circuits -digital superconducting electronics [4]. The SFQ technology is provided in frame of the IPHT-based FLUXONICS Foundry [5] -a strategic development based on the European roadmap of superconductive electronics [6]. Parameters of these processes are presented in Table 1.…”
Section: Low-t C Junctionsmentioning
confidence: 99%