ÉTUDE EXPÉRIMENTALE DE LA RELAXATION DE RÉSEAU DES CENTRES PROFONDS DANS GaAs

Bois, Danis

doi:10.1051/jphyscol:1974334

Cited by 6 publications

(10 citation statements)

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“…This electronic level being degenerate, the coupling with the lattice leads to a Jahn-Teller effect causing a splitting ST2 582, 5E and 5E , 5 AI, 5B,. The internal transition leads to a gaussian band of moments Ei, Ui well known by absorption measurements [7,8].…”

Section: Fig 2 -Photoionization Cross Section A' P Of Hl1 Measuredmentioning

confidence: 98%

“…density of the photons with frequency v into the depletion layer in the measurement conditions. For the case of the chromium, we measure the ionization cross section of the transition Cr+ 2 hvl Cr+ 3 + e-6° is BC n shown in figure 1. The optical absorption of an n type GaAs doped with chromium (after [7]) is also given on the figure.…”

Section: Photoluminescence Experiments -mentioning

confidence: 99%

“…Qn of HLl measured at 300 K on n type LPE GaAs doped with chromium. 000 : experiment; : theoretical fit I ; ----: theoretical fit II (see text and table 11); 0 : optical absorption spectra (300 K) of a n type Çr doped GaAs sample [7].…”

Section: Fig 1 -Photoionization Cross Sectionmentioning

confidence: 99%

“…The parameters of the internal transition are those determined by optical absorption [7]. The two sets of numerical data are given in the table II.…”

Section: Fig 2 -Photoionization Cross Section A' P Of Hl1 Measuredmentioning

confidence: 99%

“…This type of material, specifically for GaAs : Cr has a great technological importance as substrates for device fabrication [1]. Consequently, the physical nature and the properties of the Cr centre which control the electrical properties of the material has been the subject of several studies and numerous techniques have been applied : optical spectroscopic measurements like luminescence [2][3][4][5][6], absorption [7][8][9][10][11], ESR studies [12][13][14][15][16][17], electro-optical measurements such as Deep Level Transient Spectroscopy (DLTS) and photocapacity [18][19][20][21][22][23][24], Optical Transient Current Spectroscopy (OTCS) [25][26][27], photoconductivity and photo-Hall methods [28][29][30][31].…”

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confidence: 99%

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Detailed optical characterization of the deep cr level in gaas

et al. 1982

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The deep level optical spectroscopy by the so called DLOS technique gives the spectral shape of both σon(hv) and σ op(hv), the optical cross sections for the transitions between a deep level and the conduction and valence bands, in a very sensitive and selective way. We have applied this technique to the optical study of the HL1 trap related to chromium in GaAs, in very pure LPE layers of n and p type doped with chromium. We can therefore determine what kind of charge states of chromium we are dealing with by çomparing σo n and σop with the optical absorption spectra in bulk materials. Moreover, comparisons between the excitation spectra of luminescence and the photoionization cross section σo n and σop have given unambiguous interpretation of the origin of the two luminescence bands at 0.57 and 0.62 eV found by YAG laser excitation in bulk Cr doped GaAs depending on the Fermi level position. They are interpreted as the radiative transitions between the (Cr3+-Cr2+ ) centre and the bands. In this way, we give a coherent description of the thermal and optical properties of the single deep acceptor level corresponding to the Cr 3+ or Cr2+ states according to its electronic filling

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Section: Fig 2 -Photoionization Cross Section A' P Of Hl1 Measuredmentioning

confidence: 98%

Section: Photoluminescence Experiments -mentioning

confidence: 99%

Section: Fig 1 -Photoionization Cross Sectionmentioning

confidence: 99%

“…The parameters of the internal transition are those determined by optical absorption [7]. The two sets of numerical data are given in the table II.…”

Section: Fig 2 -Photoionization Cross Section A' P Of Hl1 Measuredmentioning

confidence: 99%

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confidence: 99%

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Detailed optical characterization of the deep cr level in gaas

et al. 1982

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Mise en évidence d'un état métastable du centre associé à l'oxygène dans GaAs

Bois

Vincent

1977

J. Phyique Lett.

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Trends in the electronic properties of substitutional3dtransition-metal impurities in GaAs

Hemstreet

1980

Phys. Rev. B

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The Xa scattered-wave method, in its spin-restricted version, has been used to calculate the electronic states associated with an ideal gallium vacancy as well as with the following substitutional transition-metal impurities in gallium arsenide: chromium, manganese, iron, cobalt, nickel, and copper. The gallium vacancy is found to behave as a simple acceptor with an ionization energy of approximately 0.50 eV. In addition, a level of a, symmetry with considerable amplitude in the vacancy sphere is found at an energy of approximately 0.75 eV below the valence edge. The transition-metal impurities can be broken up into two categories, depending on whether or not the 3d states of the transition metal play an active role in determining the active electronic states of the defect. Those impurities to the left of (and including) cobalt are found to behave in the "standard" way, as the active impurity states in the gap have substantial d character and there is clear evidence of bond formation involving the impurity and the neighboring host ligands. By contrast, nickel and copper appear to behave as simple acceptors in the sense that the active defect levels have little d character and are rather more characteristic of the broken bonds at the impurity site. The d states of this latter group appear as "resonances" in the host valence band and play little direct role in determining the electronic properties of the material. The paper concludes with a discussion of these results and possible factors that might afFect their validity.

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ÉTUDE EXPÉRIMENTALE DE LA RELAXATION DE RÉSEAU DES CENTRES PROFONDS DANS GaAs

Cited by 6 publications

References 0 publications

Detailed optical characterization of the deep cr level in gaas

Detailed optical characterization of the deep cr level in gaas

Mise en évidence d'un état métastable du centre associé à l'oxygène dans GaAs

Trends in the electronic properties of substitutional3dtransition-metal impurities in GaAs

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