Étude des interfaces enterrées par diffraction de rayons X

Abstract

X-ray diffraction (andlor diffusion) i s a powerfui tool for studying buried interfaces. The experimeatal X-ray techniques are reviewed, including reflectivity at low angle, extended reflectivity, non-specular diffise scattering, grazing incidemie diffractometry. The main results obtained recenîly on a variety of inîerfaces are presented briefly for different couples of solid or liquid materials. Semiconductor-semiconductor and semiconductor-metals were among the most heavily studied : the determination of roughness, steps cmelation or localised interfacial structures are available on several systems. The advent of new generation X-ray synchrotron sources ope= up new perspectives in this field.