Etude comparée à diverses températures (173, 293 et 373°K) des structures de type quartz α des phases MIIIXVO4 (MIII = Al, Ga et XV = P, As)

Goiffon, A.; Jumas, Jean‐Claude; Maurin, M.; Philippot, E.

doi:10.1016/0022-4596(86)90047-2

Cited by 55 publications

(33 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…All these X 2 O:3MoO 3 flux-grown α-GaPO 4 materials crystallized in the trigonal system without any secondary phase detectable and with lattice parameters in perfect agreement with those published on hydrothermally-grown α-GaPO 4 material [7,9].…”

Section: Flux-grown α-Gaposupporting

confidence: 73%

“…In this work, three platelets were used, defined in the standard Cartesian coordinate system as X-plate, Y-plate and Z-plate which respectively correspond to the (100), (2)(3)(4)(5)(6)(7)(8)(9)(10) and (003) (hkl)-crystallographic planes.…”

Section: Flux-grown α-Gapomentioning

confidence: 99%

“…In addition, the well-known α-β phase transition, which appears around 573 °C in α-SiO 2 (θ = 144.2°) [19,26] does not occur when the tilt angle δ is over 22° (leading to θ under 136°) [9,13,14,22,25]. In other words, the transition from an α phase to a β phase is absent for α-GeO 2 and α-GaPO 4 crystallized materials (θ = 130.04° and θ = 134.60°, respectively) [13,14,17,22,28,29].…”

Section: Introductionmentioning

confidence: 99%

“…In the XO 2 (X = Si, Ge) and MPO 4 (M = Fe, Al, Ga, B) family, the α-quartz-like structure is composed of either only XO 4 corner-shared tetrahedra or of both MO 4 and PO 4 tetrahedra forming a trigonal system [3][4][5][6][7][8][9][10][11][12][13][14][15][16]. The α-phase (P3 1 21 or P3 2 21, respectively left-handed or right-handed, Z = 3) is derived from the β-phase (P6 2 22 or P6 4 22) by a symmetry loss induced by a tilt of the tetrahedra around the b-axis.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Flux-Grown Piezoelectric Materials: Application to α-Quartz Analogues

et al. 2014

View full text Add to dashboard Cite

Using the slow-cooling method in selected MoO 3 -based fluxes, single-crystals of GeO 2 and GaPO 4 materials with an α-quartz-like structure were grown at high temperatures (T ≥ 950 °C). These piezoelectric materials were obtained in millimeter-size as well-faceted, visually colorless and transparent crystals. Compared to crystals grown by hydrothermal methods, infrared and Raman measurements revealed flux-grown samples without significant hydroxyl group contamination and thermal analyses demonstrated a total reversibility of the α-quartz ↔ β-cristobalite phase transition for GaPO 4 and an absence of phase transition before melting for α-GeO 2 . The elastic constants C IJ (with I, J indices from 1 to 6) of these flux-grown piezoelectric crystals were experimentally determined at room and high temperatures. The ambient results for as-grown α-GaPO 4 were in good agreement with those obtained from hydrothermally-grown samples and the two longitudinal elastic constants measured versus temperature up to 850 °C showed a monotonous evolution. The extraction of the ambient piezoelectric stress contribution e 11 from the C D 11 to C E 11 difference gave for the piezoelectric strain coefficient d 11 of flux-grown α-GeO 2 crystal a value of 5.7(2) pC/N, which is more than twice that of α-quartz. As the α-quartz structure of GeO 2 remained stable up to melting, a piezoelectric activity was observed up to 1000 °C.

show abstract

Section: Flux-grown α-Gaposupporting

confidence: 73%

Section: Flux-grown α-Gapomentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Flux-Grown Piezoelectric Materials: Application to α-Quartz Analogues

et al. 2014

View full text Add to dashboard Cite

show abstract

“…It is chemically compatible with most widely used ceramic materials including silicon carbide, alumina, mullite, and silica over a moderate range of temperatures. It is isostructural with silica and undergoes similar polymorphic transformations (quartz-type, tridymite, and cristobalite) [13][14][15][16][17][18][19][20][21][22][23]. In fact, its use as a high temperature "engineering ceramic" material is limited primarily because of these phase transformations which involve large molar volume changes.…”

Section: Introductionmentioning

confidence: 99%

Investigation of a New Class of Disordered Inorganic Materials

Sambasivan¹,

Steiner²

2001

View full text Add to dashboard Cite

A new piezoelectric single crystal obtained by Ge doping in the SiO₂ structure

Miclău¹,

Miclău

Poienar

et al. 2009

Cryst. Res. Technol.

View full text Add to dashboard Cite

The interest of Si1–xGexO2 single crystals with alpha‐quartz structure is connected to improvement of electromechanical coefficients and rise of α – β phase transition of quartz one. Growth of an α‐SixGe1–xO2 crystal was realized by a hydrothermal method of temperature gradient in autoclaves, made from Cr–Ni alloys. Nutrient material was prepared from synthetic quartz as crashed rods and placed in the bottom of autoclaves. There was loaded GeO2 powder additive in proportions to quartz nutrient. Single crystals were investigated by electron microprobe analysis, X‐ray diffraction and atomic force microscopy. The most important result, which was obtained during the investigations, is an experimental proof of growth of α‐SixGe1–xO2 single crystals under the hydrothermal conditions. The present results thus open the possibility to tune the piezoelectric properties of these materials by varying the chemical composition. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

show abstract

Etude comparée à diverses températures (173, 293 et 373°K) des structures de type quartz α des phases MIIIXVO4 (MIII = Al, Ga et XV = P, As)

Cited by 55 publications

References 6 publications

Flux-Grown Piezoelectric Materials: Application to α-Quartz Analogues

Flux-Grown Piezoelectric Materials: Application to α-Quartz Analogues

Investigation of a New Class of Disordered Inorganic Materials

A new piezoelectric single crystal obtained by Ge doping in the SiO₂ structure

Contact Info

Product

Resources

About

Etude comparée à diverses températures (173, 293 et 373°K) des structures de type quartz α des phases MIIIXVO4 (MIII = Al, Ga et XV = P, As)

Cited by 55 publications

References 6 publications

Flux-Grown Piezoelectric Materials: Application to α-Quartz Analogues

Flux-Grown Piezoelectric Materials: Application to α-Quartz Analogues

Investigation of a New Class of Disordered Inorganic Materials

A new piezoelectric single crystal obtained by Ge doping in the SiO2 structure

Contact Info

Product

Resources

About

A new piezoelectric single crystal obtained by Ge doping in the SiO₂ structure