Etching Treatment of MILC Poly-Si TFTs Using CF4 Plasma to Improve Electrical Performance

Abstract

In this study, CF 4 -plasma was employed to improve the electrical performance of metal-induced lateral crystallization (MILC) polycrystalline silicon thin film transistors (poly-Si TFTs). It was found that CF 4 -plasma minimize effectively the trap-state density during etching surface of channel, leading to superior electrical characteristics such as high field-effect mobility, low threshold voltage, low subthreshold slope, low leakage current, and high on/off current ratio.