Etching of UO2 in NF3 RF plasma glow discharge

Veilleux, John M.; El‐Genk, Mohamed S.; Chamberlin, E. P.; Munson, C. P.; Fitzpatrick, J.

doi:10.1016/s0022-3115(99)00154-3

Cited by 20 publications

(12 citation statements)

References 20 publications

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“…As expected, NF 3 turns out to be the most efficient etchant gas among the three gases. It seems to be ascribed to the fact that NF 3 has the highest dissociation rate of fluorine atoms compared to the other gas mixtures [6] and that NF 3 plasma processing can avoid parasitical carbonation or sulfuration reaction that may take place on the surface and thus retard the surface etching reaction. The experimental finding that the etching reaction rate is closely related to the intensity of fluorine atom generated in the plasma gas implies that principal reactant is the fluorine atom and the reaction is surface-reaction rate limiting.…”

Section: Measurements Of Surface Etching Reactionmentioning

confidence: 99%

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Cold Plasma Processing and Plasma Chemistry of Metallic Cobalt Surface

Jeon

Kim

Jung

2008

Plasma Chem Plasma Process

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Plasma processing of metallic cobalt was experimentally investigated with three fluorine-containing gases, CF 4 -O 2 , SF 6 -O 2 , and NF 3 to determine the surface decontamination rate and to examine the reaction mechanism. Results show that the maximum etching rate reaches 17.12 lm/min with NF 3 gas at 420°C, while the rates are 2.56 lm/min and 1.14 lm/min with CF 4 -O 2 and SF 6 -O 2 gas, respectively, at the same temperature. AES analysis identified the constituent elements of the reaction products to be oxygen, fluorine, and cobalt, and XPS analysis reveals that the reaction product with all three plasma gases is very likely to be CoF 2 .

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Section: Measurements Of Surface Etching Reactionmentioning

confidence: 99%

“…Recently, there have been several reports on the successful nuclear applications using various plasma sources, for example, r.f. plasma [3][4][5][6], atmospheric MW plasma [7], atmospheric r.f. plasma [8], and DC arc discharge [9].…”

Section: Introductionmentioning

confidence: 99%

Cold Plasma Processing and Plasma Chemistry of Metallic Cobalt Surface

Jeon

Kim

Jung

2008

Plasma Chem Plasma Process

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“…where ρ is the density of amorphous UO 2 (4.8 g/cm 3 ) [50] During etching, the surface of the uranium oxide film is quickly converted into uranium oxyfluoride, mainly UOF 4 . Evidently, these fluorinated species must build up on the surface before the incoming F atoms can react with it and produce the volatile UF 6 reaction product.…”

Section: Presented Inmentioning

confidence: 99%

Atmospheric-Pressure Plasma Cleaning of Contaminated Surfaces

Hicks¹,

Herrmann²

2003

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“…Martz et al [3] first demonstrated the possibility of removing plutonium with a radio frequency, CF 4 -O 2 plasma at low pressure. Recently, Veilleux et al [4] and Kim et al [5] have investigated the etching of uranium dioxide by CF 4 -O 2 and NF 3 plasmas at low pressure. Etching rates of radioactive materials were found to range between 0.2 and 7.0 lm/min.…”

Section: Introductionmentioning

confidence: 99%

“…This discharge differs from other atmospheric pressure plasmas, such as torches, dielectric barrier discharges, coronas and cold cathodes, in that the neutral gas temperature is below 200°C and the weakly ionized gas is homogeneous in space and time [7]. For the decontamination application, this device may be fed with CF 4 and O 2 . Reactive species generated in the plasma will react with the radioactive elements, and convert them into volatile metal fluorides.…”

Section: Introductionmentioning

confidence: 99%