Etching of Germanium in Hydrogenperoxide Solutions

Huygens, Inge; Gomes, W. P.; Strubbe, Katrien

doi:10.1149/1.2731205

Cited by 19 publications

(22 citation statements)

References 7 publications

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“…The above displacement reaction competes with surface hydroxylation and consequently releases Ge atoms Ge (aqua)chloro complexes. 36,45 The presence of surface chlorides, rather than the protons, accelerates the desorption/dissolution of oxidation products as supported by the XPS results (Figs. 3-4).…”

Section: Resultsmentioning

confidence: 64%

“…Later, an electrochemical study by Gerischer and co-workers 38 suggested a purely chemical mechanism for the acidic H 2 O 2 etchant, which was also supported by the work of Huygens via profilometry and electrochemical experiments for electrolytes of various pH. 36 Furthermore, Sioncke and co-workers provided extensive etch rate data for a wide range of acidic and alkaline solutions. 29 Numerous wet passivation methods have also been investigated that were based on halogenic acids such as HF, 39,40 HBr, 41 HI 42 and HCl.…”

mentioning

confidence: 86%

“…[22][23][24][25][26][27] In the past, wet-chemical etching of Ge utilizing hydrogen peroxide based etchants have been explored. [27][28][29][30][31][32][33][34][35][36][37] Cerniglia et al 32 have reported on the etching of Ge in aqueous H 2 O 2 with concentrations ranging from 3% to 30% using a mass balance difference method and proposed an electroless dissolution mechanism for Ge (100). Later, an electrochemical study by Gerischer and co-workers 38 suggested a purely chemical mechanism for the acidic H 2 O 2 etchant, which was also supported by the work of Huygens via profilometry and electrochemical experiments for electrolytes of various pH.…”

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confidence: 99%

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Wet Chemical Processing of Ge in Acidic H₂O₂ Solution: Nanoscale Etching and Surface Chemistry

Abrenica

Fingerle

Лебедев

et al. 2020

ECS J. Solid State Sci. Technol.

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Herein, we investigate wet-chemical etching of Ge (100) in acidic H2O2 solutions for technologically advanced device processing. Nanoscale etching kinetics data were provided by inductively coupled plasma mass spectrometry (ICP-MS) measurements. Rotation rate- dependent measurement showed that the hydrodynamics of the system is important. The dependence of the etch rate on the HCl concentration was considered for the range 0.001–1 M HCl. A stark difference morphologically for >1 M HCl, which resulted in a rough surface confirmed by atomic force microscopy (AFM) images, has been observed. X-ray photoelectron spectroscopy (XPS) measurements provided insight in the surface chemistry of etching for device processing. Electrochemical measurements confirmed that the etching process follows a chemical mechanism. Based on X-ray photoelectron spectroscopy (XPS) data, we present reaction schemes that help to understand the results.

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Section: Resultsmentioning

confidence: 64%

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confidence: 86%

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confidence: 99%

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Wet Chemical Processing of Ge in Acidic H₂O₂ Solution: Nanoscale Etching and Surface Chemistry

Abrenica

Fingerle

Лебедев

et al. 2020

ECS J. Solid State Sci. Technol.

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“…With the continuous oxidation from H 2 O 2 and oxide removal from acid, Ge could be thinned down. It should be noted that an anion like Cl – may play a more important role in the etching process than proton concentration. , …”

Section: Results and Discussionmentioning

confidence: 99%

Sub-10 μm-Thick Ge Thin Film Fabrication from Bulk-Ge Substrates via a Wet Etching Method

Wang,

Zhu,

Wen

et al. 2023

ACS Omega

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Low-defect density Ge thin films are crucial for studying the impact of defect density on the performance limits of Ge-based optical devices (optical detectors, LEDs, and lasers). Ge thinning is also important for Ge-based multijunction solar cells. In this work, Ge wet etching using three acidic H 2 O 2 solutions (HF, HCl, and H 2 SO 4 ) was studied in terms of etching rate, surface morphology, and surface roughness. HCl–H 2 O 2 –H 2 O (1:1:5) was demonstrated to wet-etch 535 μm-thick bulk-Ge substrates to 4.1 μm with a corresponding RMS surface roughness of 10 nm, which was the thinnest Ge film from bulk-Ge via a wet etching method to the best of our knowledge. The good quality of pre-etched bulk-Ge was preserved, and the low threading dislocation density of 6000–7000 cm –2 was maintained after the etching process. This approach provides an inexpensive and convenient way for accurate Ge substrate thinning in applications such as multijunction solar cells and sub-10 μm-thick Ge thin film preparation, which enables future studies of low-defect density Ge-based devices such as photodetectors, LEDs, and lasers.

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“…Figure b,c shows the Ge wet etching process, both in the middle of the etching and after, respectively. The reaction of the H 2 O 2 solution with Ge in order to dissolve it is well known and is given in eqs and …”

Section: Resultsmentioning

confidence: 99%

Diversely Doped Uniform Silicon Nanotube Axial Heterostructures Enabled by “Dopant Reflection”

et al. 2021

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Here, we propose a novel method for the synthesis of extremely uniform, diversely doped silicon nanotube heterostructures. The method, comprising a simple two-step synthesis, exploits the use of a Ge nanowire sacrificial core upon which a multidoping axial pattern can be easily obtained, that is enclosed in an intrinsic Si shell. The Ge–Si core–shell structure is then heated to 750 °C, allowing the migration of dopant elements from the Ge core directly into the Si shell. Removal of the Ge core, via either wet or dry etch, does not impair the crystallinity of the Si shell nor its electrical characteristics, allowing for the formation of a multidoped axially patterned, conformal, and uniform Si nanotube. The precise dopant patterning allows for the extension of Si nanotube applications, which were unattainable because of the inability to precisely control the parameters and uniformity of the nanotubes while doping the structure simultaneously.

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Etching of Germanium in Hydrogenperoxide Solutions

Cited by 19 publications

References 7 publications

Wet Chemical Processing of Ge in Acidic H₂O₂ Solution: Nanoscale Etching and Surface Chemistry

Wet Chemical Processing of Ge in Acidic H₂O₂ Solution: Nanoscale Etching and Surface Chemistry

Sub-10 μm-Thick Ge Thin Film Fabrication from Bulk-Ge Substrates via a Wet Etching Method

Diversely Doped Uniform Silicon Nanotube Axial Heterostructures Enabled by “Dopant Reflection”

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Etching of Germanium in Hydrogenperoxide Solutions

Cited by 19 publications

References 7 publications

Wet Chemical Processing of Ge in Acidic H2O2 Solution: Nanoscale Etching and Surface Chemistry

Wet Chemical Processing of Ge in Acidic H2O2 Solution: Nanoscale Etching and Surface Chemistry

Sub-10 μm-Thick Ge Thin Film Fabrication from Bulk-Ge Substrates via a Wet Etching Method

Diversely Doped Uniform Silicon Nanotube Axial Heterostructures Enabled by “Dopant Reflection”

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Product

Resources

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Wet Chemical Processing of Ge in Acidic H₂O₂ Solution: Nanoscale Etching and Surface Chemistry

Wet Chemical Processing of Ge in Acidic H₂O₂ Solution: Nanoscale Etching and Surface Chemistry