Etching-induced damage in heavily Mg-doped p-type GaN and its suppression by low-bias-power inductively coupled plasma-reactive ion etching

Kumabe, Takeru; Ando, Yoshinobu; Watanabe, Hirotaka; Deki, Manato; Tanaka, Atsushi; Nitta, Shugo; Honda, Yoshio; Amano, Hiroshi

doi:10.35848/1347-4065/abd538

Cited by 17 publications

(6 citation statements)

References 33 publications

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“…V-pits would form during the growth below the temperature around 850 °C through threading dislocations (TDs) for Mg-doped p-GaN layers [16] . FS-GaN substrates with low TDs were therefore used in this experiment to measure the electrical properties avoiding the V-pits formation.…”

Section: Experiments Methodsmentioning

confidence: 99%

Suitable contacting scheme for evaluating electrical properties of GaN-based p-type layers

Huang¹,

Ikeda²,

Zhang³

et al. 2023

J. Semicond.

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A suitable contacting scheme for p-(Al)GaN facilitating quick feedback and accurate measurements is proposed in this study. 22 nm p+-GaN followed by 2 nm p-In0.2Ga0.8N was grown on p-type layers by metal-organic chemical vapor deposition. Samples were then cut into squares after annealing and contact electrodes using In balls were put at the corners of the squares. Good linearity between all the electrodes was confirmed in I–V curves during Hall measurements even with In metal. Serval samples taken from the same wafer showed small standard deviation of ~ 4% for resistivity, Hall mobility and hole concentration. The influence of contact layer on the electrical characteristics of bulk p-type layers was then investigated by step etching technique using inductively coupled plasma etching and subsequent Hall-effect measurements. Identical values could be obtained consistently when a 28 nm non-conductive layer thickness at the surface was taken into account. Therefore, the procedures for evaluating the electrical properties of GaN-based p-type layers just using In balls proposed in this study are shown to be quick and useful as for the other conventional III–V materials.

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Section: Experiments Methodsmentioning

confidence: 99%

Suitable contacting scheme for evaluating electrical properties of GaN-based p-type layers

Huang¹,

Ikeda²,

Zhang³

et al. 2023

J. Semicond.

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show abstract

“…There are various forms of RIE, such as inductively coupled plasma reactive ion etching (ICP) RIE, deep reactive ion etching (DRIE), cryogenic DRIE, and Bosch DRIE. These RIE techniques are used to micro-fabricate silicon hollow micro-needles with smooth tapering [ 107 ], organic semiconductors with high-resolution displays [ 108 ], the optimization of high-aspect-ratio vertical Si nano-wire anodes for lithium-ion batteries [ 109 ], and the high fidelity and low roughness of SiC substrates for bulk acoustic wave resonators [ 110 ], investigate etching induced damage in p-type GaN at low temperatures [ 111 ] and the isotropic silicon etching of MEMS [ 112 ]. The process has some drawbacks, however, including being expensive because of the use of complex equipment, controlled conditions, and sidewall defects.…”

Section: Alternative Micro-feature Fabrication Processesmentioning

confidence: 99%

Electropolishing and Shaping of Micro-Scale Metallic Features

2022

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Electropolishing (EP) is most widely used as a metal finishing process. It is a non-contact electrochemical process that can clean, passivate, deburr, brighten, and improve the biocompatibility of surfaces. However, there is clear potential for it to be used to shape and form the topology of micro-scale surface features, such as those found on the micro-applications of additively manufactured (AM) parts, transmission electron microscopy (TEM) samples, micro-electromechanical systems (MEMs), biomedical stents, and artificial implants. This review focuses on the fundamental principles of electrochemical polishing, the associated process parameters (voltage, current density, electrolytes, electrode gap, and time), and the increasing demand for using environmentally sustainable electrolytes and micro-scale applications. A summary of other micro-fabrication processes, including micro-milling, micro-electric discharge machining (EDM), laser polishing/ablation, lithography (LIGA), electrochemical etching (MacEtch), and reactive ion etching (RIE), are discussed and compared with EP. However, those processes have tool size, stress, wear, and structural integrity limitations for micro-structures. Hence, electropolishing offers two-fold benefits of material removal from the metal, resulting in a smooth and bright surface, along with the ability to shape/form micro-scale features, which makes the process particularly attractive for precision engineering applications.zx3

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“…In addition, an anode electrode with low contact resistance is difficult to form with the player surface exposed by etching. 24,25) A method of forming a tunnel junction between each LED based on the aforementioned structure has been proposed. [26][27][28][29] Because the tunnel junction enables the anode/cathode electrodes to be shared between each LED, the ratio of the electrode area on the wafer can be reduced.…”

Section: Introductionmentioning

confidence: 99%

InGaN-based blue, green monolithic micro-LED display with n-type interlayer

Okuno,

Goshonoo,

Ohya

2024

Jpn. J. Appl. Phys.

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InGaN-based monolithic full-color light-emitting diodes (LEDs), such as augmented reality and virtual reality, are candidates for displays with highly integrated pixels. We demonstrated a monolithic micro-LED display with green- and blue-emitting active layers separated by an n-type interlayer. The interlayer plays an important role in individually emitting green and blue light. The monolithic LED display was fabricated by mesa formation reaching the interlayer and the regrowth of the p-type layer, resulting in horizontally integrated green and blue LEDs. The display measuring 0.64 mm2 with 20 rows and 20 columns had 40 µm × 40 µm pixels comprising 20 µm × 40 µm sub-pixels with an emitting area of 8 µm × 23 μm and was driven by a passive matrix circuit. Images of the monolithic micro-LED display were successfully obtained by individually controlling the green- and blue-emitting micro-LEDs. These results will enhance the commercialization of micro-LED displays.

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Etching-induced damage in heavily Mg-doped p-type GaN and its suppression by low-bias-power inductively coupled plasma-reactive ion etching

Cited by 17 publications

References 33 publications

Suitable contacting scheme for evaluating electrical properties of GaN-based p-type layers

Suitable contacting scheme for evaluating electrical properties of GaN-based p-type layers

Electropolishing and Shaping of Micro-Scale Metallic Features

InGaN-based blue, green monolithic micro-LED display with n-type interlayer

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